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Register a new userTrapped state at a dislocation in a weak magnetomechanical topological insulator
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Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A strong topological insulator is characterized by robust conducting states on emph{all} boundaries protected by certain internal symmetries. A weak topological insulator (WTI) however, requires lattice translation symmetry, making it more sensitive to disorder. However, this sensitivity gives rise to interesting characteristics such as anisotropic edge modes, quantized charge polarization, and bound states appearing at dislocation defects. Despite hosting interesting features, the sensitivity of WTIs to disorder poses an experimental confirmation challenge. Here we realize a 2D magneto-mechanical metamaterial and demonstrate experimentally the unique features of a WTI. Specifically, we show that the 2D WTI is anisotropic and hosts edge modes only on certain edges, as well as hosting a bound state at a dislocation defect. We construct the 2D WTI from stacked 1D SSH chains for which we show experimentally the different gapped phases of the 1D model.
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Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin flip reflection occurs and the spin rotation angle jumps by $pi$. We discuss the origin of this phenomena, and systematically study the dependence of spin-flip and spin-conserving scattering amplitudes on the interface transparency and metal Fermi surface parameters. The interface spectrum contains a well-defined Dirac cone in the tunneling limit, and smoothly evolves into a continuum of metal induced gap states for good contacts. We also investigate the complex band structure of Bi$_2$Se$_3$.
Dislocations are ubiquitous in three-dimensional solid-state materials. The interplay of such real space topology with the emergent band topology defined in reciprocal space gives rise to gapless helical modes bound to the line defects. This is known as bulk-dislocation correspondence, in contrast to the conventional bulk-boundary correspondence featuring topological states at boundaries. However, to date rare compelling experimental evidences are presented for this intriguing topological observable, owing to the presence of various challenges in solid-state systems. Here, using a three-dimensional acoustic topological insulator with precisely controllable dislocations, we report an unambiguous experimental evidence for the long-desired bulk-dislocation correspondence, through directly measuring the gapless dispersion of the one-dimensional topological dislocation modes. Remarkably, as revealed in our further experiments, the pseudospin-locked dislocation modes can be unidirectionally guided in an arbitrarily-shaped dislocation path. The peculiar topological dislocation transport, expected in a variety of classical wave systems, can provide unprecedented controllability over wave propagations.
The interplay between real-space topological lattice defects and the reciprocal-space topology of energy bands can give rise to novel phenomena, such as one-dimensional topological modes bound to screw dislocations in three-dimensional topological insulators. We obtain direct experimental observations of dislocation-induced helical modes in an acoustic analog of a weak three-dimensional topological insulator. The spatial distribution of the helical modes is found through spin-resolved field mapping, and verified numerically by tight-binding and finite-element calculations. These one-dimensional helical channels can serve as robust waveguides in three-dimensional media. Our experiment paves the way to studying novel physical modes and functionalities enabled by topological lattice defects in three-dimensional classical topological materials.
Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of TI is essential to realize the quantum anomalous Hall effect (QAHE) and other novel magneto-electric phenomena. Here, by using a combination of first principles calculations, magneto-transport, angle-resolved photoemission spectroscopy (ARPES), and time resolved ARPES (tr-ARPES), we study the electronic properties of Gadolinium (Gd) doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. We further demonstrate that introducing diluted 4f-electron magnetism into the Sb2Te3 topological insulator system by the Gd doping creates surface magnetism in this system. Our results provide a new platform to investigate the interaction between dilute magnetism and topology in doped topological materials.
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