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Register a new userThickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
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Added by
Andres Castellanos-Gomez
Publication date
2019
fields
Physics
and research's language is
English
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Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and monotonic thickness dependence, making it a very convenient probe of the flake thickness. The method proved to be robust given the small flake-to-flake variation and the insensitivity to doping changes of MoS2. We also tested the method for MoSe2, WS2 and WSe2. These results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy.
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
The atomic-level vdW heterostructures have been one of the most interesting quantum material systems, due to their exotic physical properties. The interlayer coupling in these systems plays a critical role to realize novel physical observation and enrich interface functionality. However, there is still lack of investigation on the tuning of interlayer coupling in a quantitative way. A prospective strategy to tune the interlayer coupling is to change the electronic structure and interlayer distance by high pressure, which is a well-established method to tune the physical properties. Here, we construct a high-quality WS2/MoSe2 heterostructure in a DAC and successfully tuned the interlayer coupling through hydrostatic pressure. Typical photoluminescence spectra of the monolayer MoSe2 (ML-MoSe2), monolayer WS2 (ML-WS2) and WS2/MoSe2 heterostructure have been observed and its intriguing that their photoluminescence peaks shift with respect to applied pressure in a quite different way. The intralayer exciton of ML-MoSe2 and ML-WS2 show blue shift under high pressure with a coefficient of 19.8 meV/GPa and 9.3 meV/GPa, respectively, while their interlayer exciton shows relative weak pressure dependence with a coefficient of 3.4 meV/GPa. Meanwhile, external pressure helps to drive stronger interlayer interaction and results in a higher ratio of interlayer/intralayer exciton intensity, indicating the enhanced interlayer exciton behavior. The first-principles calculation reveals the stronger interlayer interaction which leads to enhanced interlayer exciton behavior in WS2/MoSe2 heterostructure under external pressure and reveals the robust peak of interlayer exciton. This work provides an effective strategy to study the interlayer interaction in vdW heterostructures, which could be of great importance for the material and device design in various similar quantum systems.
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $mathrm{{mu}A/{mu}m}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $mathrm{29 pm 5 cm^2V^{-1}s^{-1}}$ at $mathrm{6.1 times 10^{12} cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.
We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.5 - 3 eV. The results were obtained from reflection spectra using a Kramers-Kronig constrained variational analysis. From the dielectric functions, we obtain the absolute absorbance of the monolayers. We also provide a comparison of the dielectric function for the monolayers with the corresponding bulk materials.
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