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Register a new userSilicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-
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This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope, containing SiPM pulses acquired at different temperatures and bias voltages. Important SiPMs characteristics such as: charge distribution, gain, breakdown voltage, pulse shape (rise time and recovery time) and overvoltage can been calculated. Developed procedure can be easily used to analyze any type of SiPM detectors.
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The temperature of a nonneutral plasma confined in a Penning-Malmberg trap can be determined by slowly lowering one side of the traps electrostatic axial confinement barrier; the temperature is inferred from the rate at which particles escape the trap as a function of the barrier height. Often, the escaping particles are directed toward a microchannel plate (MCP), and the resulting amplified charge is collected on a phosphor screen. The screen is used for imaging the plasma, but can also be used as a Faraday cup FC for a temperature measurement. The sensitivity limit is then set by microphonic noise enhanced by the screens high voltage bias. Alternately, a silicon photomultiplier (SiPM) can be employed to measure the charge via the light emitted from the phosphor screen. This decouples the signal from the microphonic noise and allows the temperature of colder and smaller plasmas to be measured than could be measured previously; this paper focusses on the advantages of a SiPM over a FC.
A mini-PET style detector system is being developed for a plant imaging application with a compact array of silicon photomultipliers (SiPM) replacing position sensitive photomultipliers (PSPMT). In addition to compactness, the use of SiPMs will allow imaging setups involving high strength MRI-type magnetic fields. The latter will allow for better position resolution of the initial positron annihilations in the plant tissue. In the present work, prototype arrays are tested for the uniformity of their response as it is known that PSPMTs require significant gain compensation on the individual channels to achieve an improved uniformity in response. The initial tests indicate a high likelihood that the SiPM arrays can be used without any gain compensation.
Since the early days of experimental particle physics photomultipliers (PMTs) have played an important role in the detector design. Thanks to their capability of fast photon counting, PMTs are extensively used in the new-generation of astroparticle physics experiments, such as air, ice and water Cherenkov detectors. Small size PMTs ($leq $ 3 inches diameter) show little sensitivity to the Earth magnetic field, small transit time, stable transit time spread; the price per photocathode area is less comparing to the one for the large area PMTs, typically used so far in such applications. Together with developments and reduced price of multichannel electronics, the use of PMTs of 3-inches or smaller diameter is a promising option even for nowadays large volume detectors. In this paper we report on the design and performance of a new instrument for mass characterisation of PMTs (from 1 inch to 3 inches size), capable to calibrate hundreds of PMTs per day and provide measurements of dark counts, signal amplitude, late-, delayed-, pre- and after-pulses, transit time and transit time spread.
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, afterpulse probability. For the measurement of the breakdown voltage, $V_{BD}$, several methods using the current-voltage $IV$ curve are compared, such as the IV Model, the relative logarithmic derivative, the inverse logarithmic derivative, the second logarithmic derivative, and the third derivative models. We also show how some of these characteristics can be quite well described by few parameters and allow, for example, to build a function of the wavelength and over-voltage describing the photodetection efficiency. This is fundamental to determine the working point of SiPMs in applications where external factors can affect it. These methods are applied to the large area monolithic hexagonal SiPM S10943-2832(X), developed in collaboration with Hamamatsu and adopted for a camera for a gamma-ray telescope, called the SST-1M. We describe the measurements of the performance at room temperature of this device. The methods used here can be applied to any other device and the physics background discussed here are quite general and valid for a large phase-space of the parameters.
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $Tapprox -50~^circ$C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.
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