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Register a new userCharacterisation of a large area silicon photomultiplier
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This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, afterpulse probability. For the measurement of the breakdown voltage, $V_{BD}$, several methods using the current-voltage $IV$ curve are compared, such as the IV Model, the relative logarithmic derivative, the inverse logarithmic derivative, the second logarithmic derivative, and the third derivative models. We also show how some of these characteristics can be quite well described by few parameters and allow, for example, to build a function of the wavelength and over-voltage describing the photodetection efficiency. This is fundamental to determine the working point of SiPMs in applications where external factors can affect it. These methods are applied to the large area monolithic hexagonal SiPM S10943-2832(X), developed in collaboration with Hamamatsu and adopted for a camera for a gamma-ray telescope, called the SST-1M. We describe the measurements of the performance at room temperature of this device. The methods used here can be applied to any other device and the physics background discussed here are quite general and valid for a large phase-space of the parameters.
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The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1E6 for a constant over-voltage of 4V was measured between 25degC and -196degC and found to be invariant with temperature, the corresponding single photoelectron dark count rate reducing from 1MHz to 40Hz respectively. Following multiple thermal cycles no deterioration in the device performance was observed. The photon detection efficiency (PDE) was assessed as a function of photon wavelength and temperature. For an over-voltage of 4V, the PDE, found again to be invariant with temperature, was measured as 25% for 460nm photons and 11% for 680nm photons. Device saturation due to high photon flux rate, observed both at room temperature and -196degC, was again found to be independent of temperature. Although the output signal remained proportional to the input signal so long as the saturation limit was not exceeded, the photoelectron pulse resolution and decay time increased slightly at -196degC.
This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
The temperature of a nonneutral plasma confined in a Penning-Malmberg trap can be determined by slowly lowering one side of the traps electrostatic axial confinement barrier; the temperature is inferred from the rate at which particles escape the trap as a function of the barrier height. Often, the escaping particles are directed toward a microchannel plate (MCP), and the resulting amplified charge is collected on a phosphor screen. The screen is used for imaging the plasma, but can also be used as a Faraday cup FC for a temperature measurement. The sensitivity limit is then set by microphonic noise enhanced by the screens high voltage bias. Alternately, a silicon photomultiplier (SiPM) can be employed to measure the charge via the light emitted from the phosphor screen. This decouples the signal from the microphonic noise and allows the temperature of colder and smaller plasmas to be measured than could be measured previously; this paper focusses on the advantages of a SiPM over a FC.
We have studied the feasibility of a silicon photomultiplier (SiPM) to detect liquid xenon (LXe) scintillation light. The SiPM was operated inside a small volume of pure LXe, at -95 degree Celsius, irradiated with an internal Am-241 alpha source. The gain of the SiPM at this temperature was estimated to be 1.8 x 10^6 with bias voltage at 52 V. Based on the geometry of the setup, the quantum efficiency of the SiPM was estimated to be 22% at the Xe wavelength of 178 nm. The low excess noise factor, high single photoelectron detection efficiency, and low bias voltage of SiPMs make them attractive alternative UV photon detection devices to photomultiplier tubes (PMTs) for liquid xenon detectors, especially for experiments requiring a very low energy detection threshold, such as neutralino dark matter searches.
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $Tapprox -50~^circ$C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.
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