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Register a new userStudy of Silicon Photomultiplier Performance at Different Temperatures
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Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $Tapprox -50~^circ$C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.
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The performance of scintillator counters with embedded wavelength-shifting fibers has been measured in the Fermilab Meson Test Beam Facility using 120 GeV protons. The counters were extruded with a titanium dioxide surface coating and two channels for fibers at the Fermilab NICADD facility. Each fiber end is read out by a 2*2 mm^2 silicon photomultiplier. The signals were amplified and digitized by a custom-made front-end electronics board. Combinations of 5*2 cm^2 and 6*2 cm^2 extrusion profiles with 1.4 and 1.8 mm diameter fibers were tested. The design is intended for the cosmic-ray veto detector for the Mu2e experiment at Fermilab. The light yield as a function of the transverse and longitudinal position of the beam will be given.
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a significant change in their behavior and downward shift of their breakdown voltage by as much as $sim$ 0.4$pm$0.1 V. Single photon measurements appear to be no longer possible for the SiPMs under study after exposure to a dose of $sim$ 0.2 Gy (corresponding to an integrated proton flux of $sim$$phi_{p}$=1.06x10$^{8}$ p/cm$^{2}$). No visible damage to the surface of the devices was caused by the exposure.
A characterisation of scintillating fibres with silicon photomultiplier read-out was performed in view of their possible application in fibre tracking detector systems. Such a concept is being considered for the Kaos spectrometer at the Mainz Microtron MAMI and as a time-of-flight start detector for the hypernuclear physics programme at the PANDA experiment of the FAIR project. Results on particle detection effciency and time resolution are discussed. In summary, the silicon devices are very suitable for the detection of the low light yield from scintillating fibres insofar a trigger scheme is found to cope with the noise rate characteristics.
Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEGII experiment, at PSI, Switzerland, investigates the forbidden decay $mu^+ to mathrm{e}^+ gamma$. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy $E_kgeq 0.5 ~MeV$) is present in the experimental hall produced along the beamline and in the hall itself. We present the effects of neutron fluxes comparable to the MEGII expected doses on several Silicon PhotoMulitpliers (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEGII experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.
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