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Register a new userPropagation length of antiferromagnetic magnons governed by domain configurations
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The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.
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Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a novel class of data, memory, and logic devices. In this letter, we propose the spin Hall effect as a radically new mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by small fields along the nanowire. This new manifestation of CIDWM offers a very attractive new degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.
We consider nonlinear magnon interactions in collinear antiferromagnetic (AF) insulators at finite temperatures. In AF systems with biaxial magnetocrystalline anisotropy, we implement a self-consistent Hartree-Fock mean-field approximation to explore the nonlinear interactions. The resulting nonlinear magnon interactions separate into two-magnon intra- and interband scattering processes. Furthermore, we compute the temperature dependence of the magnon spectrum due to nonlinear magnon interactions for square and hexagonal lattices. Measurements of the predicted AF resonance at different temperatures can probe nonlinear interactions close to the magnetic phase transitions. Our findings establish a framework for exploring magnonic phenomena where interactions are essential, e.g., magnon transport and Bose-Einstein condensation of magnons.
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
The shape dependence for the technologically important nickel oxide (NiO) nanocrystals on (001) strontium titanate substrates is investigated under the generalized Wulff-Kaichew (GWK) theorem framework. It is found that the shape of the NiO nanocrystals is primarily governed by the existence (or absence) of interfacial strain. Nanocrystals that have a fully pseudomorphic interface with the substrate (i.e. the epitaxial strain is not relaxed) form an embedded smooth ball-crown morphology with {001}, {011}, {111} and high-index {113} exposed facets with a negative Wulff point. On the other hand, when the interfacial strain is relaxed by misfit dislocations, the nanocrystals take on a truncated pyramidal shape, bounded by {111} faces and a {001} flat top, with a positive Wulff point. Our quantitative model is able to predict both experimentally observed shapes and sizes with good accuracy. Given the increasing demand for hetero-epitaxial nanocrystals in various physio-chemical and electro-chemical functional devices, these results lay the important groundwork in exploiting the GWK theorem as a general analytical approach to explain hetero-epitaxial nanocrystal growth on oxide substrates governed by interface strain.
In numerous functional materials, such as steels, ferroelectrics and magnets, new functionalities can be achieved through the engineering of the domain structures, which are associated with the ordering of certain parameters within the material. The recent progress in imaging techniques with atomic-scale spatial resolution transformed our understanding of domain topology revealing that, along with simple stripe-like or irregularly shaped domains, intriguing vortex-type topological domain configurations also exist. In this Review, we present a new classification scheme of ZmxZn domains with Zl vortices for two-dimensional macroscopic domain structures with m directional variants and n translational antiphases. This classification, together with the concept of topological protection and topological charge conservation, can be applied to a wide range of materials, such as multiferroics, improper ferroelectrics, layered transition-metal dichalcogenides and magnetic superconductors, as we discuss through selected examples. The resulting topological considerations provide a new basis for the understanding of the formation, kinetics, manipulation and property optimization of domains and domain boundaries in functional materials.
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