Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPredicting nanocrystal morphology governed by interfacial strain
67
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The shape dependence for the technologically important nickel oxide (NiO) nanocrystals on (001) strontium titanate substrates is investigated under the generalized Wulff-Kaichew (GWK) theorem framework. It is found that the shape of the NiO nanocrystals is primarily governed by the existence (or absence) of interfacial strain. Nanocrystals that have a fully pseudomorphic interface with the substrate (i.e. the epitaxial strain is not relaxed) form an embedded smooth ball-crown morphology with {001}, {011}, {111} and high-index {113} exposed facets with a negative Wulff point. On the other hand, when the interfacial strain is relaxed by misfit dislocations, the nanocrystals take on a truncated pyramidal shape, bounded by {111} faces and a {001} flat top, with a positive Wulff point. Our quantitative model is able to predict both experimentally observed shapes and sizes with good accuracy. Given the increasing demand for hetero-epitaxial nanocrystals in various physio-chemical and electro-chemical functional devices, these results lay the important groundwork in exploiting the GWK theorem as a general analytical approach to explain hetero-epitaxial nanocrystal growth on oxide substrates governed by interface strain.
rate research
Read More
In order to accommodate an increasing demand for carbon nanotubes (CNTs) with desirable characteristics one has to understand the origin of helicity of their structures. Here, through in situ microscopy we demonstrate that the nucleation of a carbon nanotube is initiated by the formation of the carbon cap. Nucleation begins with the formation of a graphene embryo that is bound between opposite step-edges on the nickel catalyst surface. The embryo grows larger as the step-edges migrate along the surface, leading to the formation of a curved carbon cap when the steps flow across the edges of adjacent facets. Further motion of the steps away from the catalyst tip with attached rims of the carbon cap generates the wall of the nanotube. Density Functional Theory calculations bring further insight into the process, showing that step flow occurs by surface self diffusion of the nickel atoms via a step-edge attachment-detachment mechanism. Since the fact that cap forms first in the sequence of stages involved in nanotube growth, we suggest that it originates the helicity of the nanotube. Therefore, the angular distribution of catalyst facets could be exploited as a new parameter for controlling the curvature of the cap and, presumably, the helicity of the nanotube.
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional theory calculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ and topological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waals heterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed of three-dimensional materials. We show that all three systems reveal a sizable ICHE, while the latter two exhibit a quantum ICHE and ICHE, respectively, reversible with ferroelectric polarization. Our proposal opens an alternative direction for voltage controlled spintronics and offers not yet explored possibilities for functional devices by heterostructure design.
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.
We present the results of an experiment where amorphous carbon was irradiated by femtosecond x-ray free electron laser pulses. The 830 eV laser pulses induce a phase transition in the material which is characterized ex-situ. The phase transition energy threshold is determined by measuring the surface of each irradiated area using an optical Nomarski microscope. The threshold fluence is found to be 282 +/- 11 mJ/cm^2, corresponding to an absorbed dose at the surface of 131 +/-5 meV/atom. Atomic force microscopy measurements show volume expansion of the irradiated sample area, suggesting a solid to solid phase transition. Deeper insight into the phase transition is gained by using scanning photoelectron microscopy and micro-Raman spectroscopy. Photoelectron microscopy shows graphitization, i.e. modification from sp3 to sp2 hybridization, of the irradiated material. The micro-Raman spectra show the appearance of local order, i.e. formation of graphite nanocrystals. Finally, the nature of the phase transition is discussed, taking into account previous theory and experimental results.
Topological defects such as magnetic solitons, vortices, Bloch lines, and skyrmions have started to play an important role in modern magnetism because of their extraordinary stability, which can be exploited in the production of memory devices. Recently, a novel type of antisymmetric exchange interaction, namely the Dzyaloshinskii-Moriya interaction (DMI), has been uncovered and found to influence the formation of topological defects. Exploring how the DMI affects the dynamics of topological defects is therefore an important task. Here we investigate the dynamic domain wall (DW) under a strong DMI and find that the DMI induces an annihilation of topological vertical Bloch lines (VBLs) by lifting the four-fold degeneracy of the VBL. As a result, velocity reduction originating from the Walker breakdown is completely suppressed, leading to a soliton-like constant velocity of the DW. Furthermore, the strength of the DMI, which is the key factor for soliton-like DW motion, can be quantified without any side effects possibly arising from current-induced torques or extrinsic pinnings in magnetic films. Our results therefore shed light on the physics of dynamic topological defects, which paves the way for future work in topology-based memory applications.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
