Do you want to publish a course? Click here

Frequency comb generation at 800nm in waveguide array quantum well diode lasers

159   0   0.0 ( 0 )
 Added by J. Nathan Kutz
 Publication date 2019
  fields Physics
and research's language is English




Ask ChatGPT about the research

A traveling wave model for a semiconductor diode laser based on quantum wells is presented as well as a comprehensive theoretical model of the lasing dynamics produced by the intensity discrimination of the nonlinear mode-coupling in a waveguide array. By leveraging a recently developed model for the detailed semiconductor gain dynamics, the temporal shaping effects of the nonlinear mode-coupling induced by the waveguide arrays can be characterized. Specifically, the enhanced nonlinear pulse shaping provided by the waveguides are capable of generating stable frequency combs wavelength of 800 nm in a GaAs device, a parameter regime not feasible for stable combline generation using a single waveguide. Extensive numerical simulations showed that stable waveform generation could be achieved and optimized by an appropriate choice of the linear waveguide coupling coefficient, quantum well depth, and the input currents to the first and second waveguides. The model provides a first demonstration that a compact, efficient and robust on-chip comb source can be produced in GaAs.



rate research

Read More

In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An optically-pumped laser on this basis is realized.
Deformed square resonators with the flat sides replaced by circular sides are proposed and demonstrated to enhance mode Q factors and adjust transverse mode intervals using the regular ray dynamic analysis and numerical simulations. Dual-transverse-mode emissions due to the ultrahigh-Q factors with different wavelength intervals are realized experimentally for AlGaInAs/InP circular-side square microlasers, and the stationary condition of the dual-mode emission is satisfied because the high-Q confined modes have totally different mode numbers. Furthermore, optical frequency combs are generated using the dual-mode lasing microlaser as a seeding light source by cascaded four-wave mixing in a highly nonlinear optical fiber.
We demonstrate simple optical frequency combs based on semiconductor quantum well laser diodes. The frequency comb spectrum can be tailored by choice of material properties and quantum-well widths, providing spectral flexibility. Finally, we demonstrate the mutual coherence of these devices by using two frequency combs on the same device to generate a radio-frequency dual comb spectrum.
Terahertz quantum cascade laser sources based on intra-cavity difference frequency generation from mid-IR devices are an important asset for applications in rotational molecular spectroscopy and sensing, beingthe only electrically pumped device able to operate in the 0.6-6 THz range without the need of bulky andexpensive liquid helium cooling. Here we present comb operation obtained by intra-cavity mixing of adistributed feedback laser at {lambda} = 6.5 {mu}m and a Fabry-Perot device at around {lambda} = 6.9 {mu}m. The resultingultra-broadband THz emission extends from 1.8 to 3.3 THz, with a total output power of 8 {mu}W at 78K.The THz emission has been characterized by multi-heterodyne detection with a primary frequencystandard referenced THz comb, obtained by optical rectification of near infrared pulses. The down-converted beatnotes, simultaneously acquired, confirm an equally spaced THz emission down to 1 MHzaccuracy. In the next future this setup can be used for Fourier transform based evaluation of the phaserelation among the emitted THz modes, paving the way to room-temperature, compact and field-deployable metrological grade THz frequency combs.
Optomechanical devices operated at their quantum limit open novel perspectives for the ultrasensitive determination of mass and displacement, and also in the broader field of quantum technologies. The access to higher frequencies implies operation at higher temperatures and stronger immunity to environmental noise. We propose and demonstrate here a new concept of quantum well photoelastic comb for the efficient coupling of light to optomechanical resonances at hundreds of GHz in semiconductor hybrid resonators. A purposely designed ultra-high resolution Raman spectroscopy set-up is exploited to evidence the transfer of spectral weight from the mode at 60 GHz to modes at 190-230 GHz, corresponding to the $8^{th}$ and $10^{th}$ overtone of the fundamental breathing mode of the light-sound cavities. The coupling to mechanical frequencies two orders of magnitude larger than alternative approaches is attained without reduction of the optomechanical constant $g_0$. The wavelength dependence of the optomechanical coupling further proves the role of resonant photoelastic interaction, highlighting the potentiality to access strong-coupling regimes. The experimental results show that electrostrictive forces allow for the design of devices optimized to selectively couple to specific mechanical modes. Our proposal opens up exciting opportunities towards the implementation of novel approaches applicable in quantum and ultra-high frequency information technologies.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا