No Arabic abstract
Strain engineering is the art of inducing controlled lattice distortions in a material to modify specific physicochemical properties. Strain engineering is applied for basic fundamental studies of physics and chemistry of solids but also for device fabrication through the development of materials with new functionalities. Thin films are one of the most important tools for strain engineering. Thin films can in fact develop large strain due to the crystalline constrains at the interface with the substrate and/or as the result of specific morphological features that can be selected by an appropriate tuning of the deposition parameters. Within this context, the in situ measurement of the substrate curvature is a powerful diagnostic tool allowing a real time monitoring of the stress state of the growing film. This manuscript reviews a few recent applications of this technique and presents new measurements that point out the great potentials of the substrate curvature measurement in strain engineering. Our study also shows how, due to the high sensitivity of the technique, the correct interpretation of the results can be in certain cases not trivial and require complementary characterizations and an accurate knowledge of the physicochemical properties of the materials under investigation.
Here, we study the role of stress state and stress gradient in whisker growth in Sn coatings electrodeposited on brass. The bulk stress in Sn coatings was measured using a laser-optics based curvature setup, whereas glancing angle X-ray diffraction was employed to quantify the surface stress; this also allowed studying role of out-of-plane stress gradient in whisker growth. Both bulk stress and surface stress in Sn coating evolved with time, wherein both were compressive immediately after the deposition, and thereafter while the bulk stress monotonically became more compressive and subsequently saturated with aging at room temperature, the stress near the surface of the Sn coating continually became more tensile with aging. These opposing evolutionary behaviors of bulk and surface stresses readily established a negative out-of-plane stress gradient, required for spontaneous growth of whiskers. The importance of out-of-plane stress gradient was also validated by externally imposing widely different stress states and stress gradients in Sn coatings using a 3-point bending apparatus. It was consistently observed that whisker growth was more in the coatings under external tensile stress, however, with higher negative out-of-plane stress gradient. The results conclusively indicate the critical role of negative out-of-plane stress gradient on whisker growth, as compared to only the nature (i.e., sign and magnitude) of stress.
Thin films on substrate are important class of targets for surface nanomodification for plasmonic or sensoric applications. There are many papers devoted to this problem. But all of them are concentrated on dynamics of a film, paying small attention to substrate. In these papers the substrate is just an object absorbing the first shock. Here we present another point of view directed onto dynamics of a substrate. We consider (i) generation of a shock wave (SW) in a support by impact of a contact; (ii) transition from one-dimensional to two-dimensional (2D) propagation of SW; (iii) we analyze lateral propagation of the SW along a film-support contact; and (iv) we calculate pressure in the compressed layer behind the decaying SW. This positive pressure acting from substrate to the film accelerates the film in direction to vacuum. Above some threshold, velocity of accelerated film is enough to separate the film from support. In these cases the circle of separation is significantly wider than the circle of the focal laser spot on film surface. Absorbed laser heat exponentially decays around an irradiated spot $F=F_{rm c} exp(-r^2/R_{rm L}^2)$, where $R_{rm L}$ is radius of a Gaussian beam, $F$ and $F_{rm c}$ are local and central fluences, $r$ is a radius from the axis. While the law of decay for the 2D SW in substrate is the power law. Therefore in our case of powerful laser action the edge of a separation circle is defined by propagation of the SW in the support.
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an amorphous p-type Si-Ge-Au alloy layer, an amorphous SiO$_2$ as the dielectric layer, and a n-type Si substrate. Both amorphous materials are characterized by very low lattice thermal conductivity, less than 1 Wm-1K-1. The Si-Ge-Au amorphous layer with 40 nm in thickness was deposited by means of molecular beam deposition technique on the 100 nm thick SiO$_2$ layer formed at the top surface of Si substrate. Bias voltage-dependent thermal conductivity and heat flow density of the fabricated device were evaluated by a time-domain thermoreflectance method at room temperature. Consequently, we observed a 55 percent increase in thermal conductivity.
Discovering and optimizing commercially viable materials for clean energy applications typically takes over a decade. Self-driving laboratories that iteratively design, execute, and learn from material science experiments in a fully autonomous loop present an opportunity to accelerate this research. We report here a modular robotic platform driven by a model-based optimization algorithm capable of autonomously optimizing the optical and electronic properties of thin-film materials by modifying the film composition and processing conditions. We demonstrate this platform by using it to maximize the hole mobility of organic hole transport materials commonly used in perovskite solar cells and consumer electronics. This demonstration highlights the possibilities of using autonomous laboratories to discover organic and inorganic materials relevant to materials sciences and clean energy technologies.
We report the successful growth of tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single UC FeS, while it has been significantly reduced in double UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of FeS thin film reveal the electronic doping effect of single UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximate 1.5 meV are observed in films of both thicknesses at 4.6 K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence.