Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSelf-driving laboratory for accelerated discovery of thin-film materials
77
0
0.0
(
0
)
Added by
Curtis Berlinguette
Publication date
2019
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Discovering and optimizing commercially viable materials for clean energy applications typically takes over a decade. Self-driving laboratories that iteratively design, execute, and learn from material science experiments in a fully autonomous loop present an opportunity to accelerate this research. We report here a modular robotic platform driven by a model-based optimization algorithm capable of autonomously optimizing the optical and electronic properties of thin-film materials by modifying the film composition and processing conditions. We demonstrate this platform by using it to maximize the hole mobility of organic hole transport materials commonly used in perovskite solar cells and consumer electronics. This demonstration highlights the possibilities of using autonomous laboratories to discover organic and inorganic materials relevant to materials sciences and clean energy technologies.
rate research
Read More
Ag nanorod arrays/dielectrics/mirror-structured multilayer thin-film are well known, highly sensitive surface-enhanced Raman scattering (SERS) substrates that enhance the Raman scattering cross-section by the interference of light. However, extracting biomarkers directly from human skin using these solid substrates is difficult. To overcome this problem, we propose a multilayer thin-film flake dispersion gel by centrifugal mixing of the multilayer thin-film and hydroxyethyl cellulose (HEC) gel. The multilayer thin-film was prepared by serial bideposition using the dynamic oblique angle deposition technique. The mixing process was optimized to obtain flakes of ~10 {mu}m so that the optical properties of the multilayer film can be preserved, and there is no risk of adverse effects on humans. The SERS features of the flakes dispersion gel were tested using 4, 4-bipyridine (BPY). The BPY molecules diffused through the highly porous gel within a few seconds, generating significant SERS signals. The multilayer film flakes dispersion gel showed a SERS signal about 20 times better than the gel-dispersed Ag nanorod arrays without a multilayer film structure. These SERS active flakes dispersion gel can be used directly on the skin surface to collect body fluids from sweat, for biomarker sensing.
Fabricating high-performance and/or high-density flexible electronics on plastic substrates is often limited by the poor dimensional stability of polymer substrates. This can be mitigated by using glass carriers during fabrication, but removing the plastic substrate from a large-area carrier without damaging the electronics remains challenging. Here we present a large-area photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 microsecond pulse of broadband light from flashlamps to lift off functional thin films from a glass carrier substrate coated with a light-absorber layer (LAL). A 3D finite element model indicates that the polymer/LAL interface reaches 865 degrees C during PLO, but the top surface of the PI reaches only 118 degrees C. To demonstrate the feasibility of this process in the production of flexible electronics, an array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and then photonically lifted off from the glass carrier. The TFT mobility was 3.15 cm2V-1s-1 before and after PLO, indicating no significant change during PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while bent. The PLO process can offer unmatched high-throughput solutions in large-area flexible electronics production.
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an amorphous p-type Si-Ge-Au alloy layer, an amorphous SiO$_2$ as the dielectric layer, and a n-type Si substrate. Both amorphous materials are characterized by very low lattice thermal conductivity, less than 1 Wm-1K-1. The Si-Ge-Au amorphous layer with 40 nm in thickness was deposited by means of molecular beam deposition technique on the 100 nm thick SiO$_2$ layer formed at the top surface of Si substrate. Bias voltage-dependent thermal conductivity and heat flow density of the fabricated device were evaluated by a time-domain thermoreflectance method at room temperature. Consequently, we observed a 55 percent increase in thermal conductivity.
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.
Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually display a large spread of zero phonon line (ZPL) energies spanning over a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. We demonstrate bottom-up, chemical vapor deposition growth of large-area, few layer hBN that hosts large quantities of SPEs: 100 per 10x10 {mu}m2. Remarkably, more than 85 percent of the emitters have a ZPL at (580{pm}10)nm, a distribution which is over an order of magnitude narrower than previously reported. Exploiting the high density and uniformity of the emitters, we demonstrate electrical modulation and tuning of the ZPL emission wavelength by up to 15 nm. Our results constitute a definite advancement towards the practical deployment of hBN single photon emitters in scalable quantum photonic and hybrid optoelectronic devices based on 2D materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
