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Register a new userAnalysis, optimization, and characterization of magnetic photonic crystal structures and thin-film material layers
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MPC (Magneto-Photonic Crystal) Optimisation is a feature-rich Windows software application designed to enable researchers to analyze the optical and magneto-optical spectral properties of multilayers containing gyrotropic constituents. A set of computational algorithms aimed at enabling the design optimization and optical or magneto-optical (MO) spectral analysis of 1D magnetic photonic crystals (MPC) is reported, together with its Windows software implementation. Relevant material property datasets (e.g., the optical spectra of refractive index, absorption, and gyration) of several important optical and MO materials are included, enabling easy reproduction of the previously published results from the field of MPC-based Faraday rotator development, and an effective demonstration-quality introduction of future users to the multiple features of this package. We also report on the methods and algorithms used to obtain the absorption coefficient spectral dispersion datasets for new materials, for which the film thickness, transmission spectrum, and refractive index dispersion function are known.
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High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.
Fabricating high-performance and/or high-density flexible electronics on plastic substrates is often limited by the poor dimensional stability of polymer substrates. This can be mitigated by using glass carriers during fabrication, but removing the plastic substrate from a large-area carrier without damaging the electronics remains challenging. Here we present a large-area photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 microsecond pulse of broadband light from flashlamps to lift off functional thin films from a glass carrier substrate coated with a light-absorber layer (LAL). A 3D finite element model indicates that the polymer/LAL interface reaches 865 degrees C during PLO, but the top surface of the PI reaches only 118 degrees C. To demonstrate the feasibility of this process in the production of flexible electronics, an array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and then photonically lifted off from the glass carrier. The TFT mobility was 3.15 cm2V-1s-1 before and after PLO, indicating no significant change during PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while bent. The PLO process can offer unmatched high-throughput solutions in large-area flexible electronics production.
$beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial $beta$-Ga$_2$O$_3$ layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of $sim$1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by $J-V$ and $C-V$ measurements, revealing an unintentional doping density of 4.3 $times$ 10$^{16}$ cm$^{-3}$ - 2 $times$ 10$^{17}$ cm$^{-3}$ in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the $beta$-Ga$_2$O$_3$ homoepitaxial layers used in power electronic and other devices.
We demonstrate how the configuration and magnitude of a magnetic field, applied during magnetron sputtering of a NiFe/IrMn bilayer, influence the magnetic properties of the structure, such as hysteresis loop shape, coercivity, and exchange bias. Furthermore, we illustrate that it is possible to create a stepwise hysteresis loop in the samples region with the highest field gradient. The found features can be used for future sensor applications.
We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials.
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