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Register a new userMicrowave fields driven domain wall motions in antiferromagnetic nanowires
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In this work, we study the microwave field driven antiferromagnetic domain wall motion in an antiferromagnetic nanowire, using the numerical calculations based on a classical Heisenberg spin model. We show that a proper combination of a static magnetic field plus an oscillating field perpendicular to the nanowire axis is sufficient to drive the domain wall propagation along the nanowire with the axial magnetic anisotropy. More importantly, the drift velocity at the resonance frequency is comparable to that induced by temperature gradients, suggesting that microwave field can be a very promising tool to control domain wall motions in antiferromagnetic nanostructures. Furthermore, the dependences of resonance frequency and drift velocity on the static and oscillating fields, the axial anisotropy, and the damping constant are discussed in details. This work provides useful information for the spin dynamics in antiferromagnetic nanostructures for spintronics applications.
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Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the axial anisotropy gradient generated by external electric field, allowing the electro control of AFM domain wall motion in the merit of ultra-low energy loss. The domain wall velocity depending on the anisotropy gradient magnitude and intrinsic material properties is simulated based on the Landau-Lifshitz-Gilbert equation and also deduced using the energy dissipation theorem. It is found that the domain wall moves at a nearly constant velocity for small gradient, and accelerates for large gradient due to the enlarged domain wall width. The domain wall mobility is independent of lattice dimension and types of domain wall, while it is enhanced by the Dzyaloshinskii-Moriya interaction. In addition, the physical mechanism for much faster AFM wall dynamics than ferromagnetic wall dynamics is qualitatively explained. This work unveils a promising strategy for controlling the AFM domain walls, benefiting to future AFM spintronic applications.
The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the Neel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM) nano-ribbon. The depinning field depending on the notch dimension and intrinsic physical parameters are deduced and also numerically calculated. Contrary to conventional conception, it is revealed that the depinning field is remarkably dependent of the damping constant and the time-dependent oscillation of the domain wall position in the weakly damping regime benefits to the wall depinning, resulting in a gradual increase of the depinning field up to a saturation value with increasing damping constant. A one-dimensional model accounting of the internal dynamics of domain wall is used to explain perfectly the simulated results. It is demonstrated that the depinning mechanism of an AFM domain wall differs from ferromagnetic domain wall by exhibiting a depinning speed typically three orders of magnitude faster than the latter, suggesting the ultrafast dynamics of an AFM system.
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices controlled by current instead of magnetic field. However, the nature of the current-driven DW motion--considered qualitatively different from magnetic-field-driven DW motion--remains yet unclear mainly due to the painfully high operation current densities J_OP, which introduce uncontrollable experimental artefacts with serious Joule heating. It is also crucial to reduce J_OP for practical device operation. By use of metallic Pt/Co/Pt nanowires with perpendicular magnetic anisotropy, here we demonstrate DW motion at current densities down to the range of 10^9 A/m^2--two orders smaller than existing reports. Surprisingly the current-driven motion exhibits a scaling behaviour identical to the field-driven motion and thus, belongs to the same universality class despite their qualitative differences. Moreover all DW motions driven by either current or field (or by both) collapse onto a single curve, signalling the unification of the two driving mechanisms. The unified law manifests non-vanishing current efficiency at low current densities down to the practical level, applicable to emerging magnetic nanodevices.
We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.
Interactions between pairs of magnetic domain walls (DW) and pinning by radial constrictions were studied in cylindrical nanowires with surface roughness. It was found that a radial constriction creates a symmetric pinning potential well, with a change of slope when the DW is situated outside the notch. Surface deformation induces an asymmetry in the pinning potential as well as dynamical pinning. The depinning fields of the domain walls were found generally to decrease with increasing surface roughness. A DW pinned at a radial constriction creates a pinning potential well for a free DW in a parallel wire. We determined that trapped bound DW states appear above the depinning threshold and that the surface roughness facilitates the trapped bound DW states in parallel wires.
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