Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOrigin of the butterfly magnetoresistance in a Dirac nodal-line system
70
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of the ZrSi(Se,Te) semimetals. Density Functional Theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level $varepsilon_F$ at symmorphic and non-symmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterfly-like angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd$_3$As$_2$, its transport lifetime is found to be 10$^2$ to 10$^3$ times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.
rate research
Read More
ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmanns semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.
We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $rho_{xx}(T,H)$, Hall resistivity $rho_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $rho_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $rho_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $rho_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelectron spectroscopy with ab initio density functional theory (DFT) complemented by an extended Hubbard model (DFT +U +V). We show that electronic correlations are reduced on an ultrashort timescale by optical excitation of high-energy electrons-hole pairs, which transiently screen the Coulomb interaction. Our findings demonstrate an all-optical method for engineering the band structure of a quantum material.
Owing to their chiral cubic structure, exotic multifold topological excitations have been predicted and recently observed in transition metal silicides like $beta$-RhSi. Herein, we report that the topological character of RhSi is also observed in its orthorhombic $alpha$-phase which displays multiple types of Dirac nodes very close to the Fermi level ($varepsilon_F$) with the near absence of topologically trivial carriers. We discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, the band structure, and the nature of the Dirac points and nodal lines occurring near $varepsilon_F$. The de Haas-van Alphen effect (dHvA) indicates a Fermi surface in agreement with the calculations. We find an elliptically-shaped nodal line very close to $varepsilon_F$ around and near the $S$-point on the $k_y-k_z$ plane that results from the intersection of two upside-down Dirac cones. The two Dirac points of the participating Kramers degenerate bands are only 5 meV apart, hence an accessible magnetic field might induce a crossing between the spin-up partner of the upper-Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
