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Register a new userBlue Microlasers Integrated on a Photonic Platform on Silicon
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Added by
Farsane Tabataba-Vakili
Publication date
2019
fields
Physics
and research's language is
English
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The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 $mu$m diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.
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To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent V{pi}L (0.2 Vcm) and V{pi}L{alpha} (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms. {c} 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. https://www.osapublishing.org/jlt/abstract.cfm?URI=jlt-37-5-1456 Publication date: March 1, 2019 This work was supported in part by the European Union (EU) under Horizon 2020 grant agreements no. H2020-ICT-2015-25-688579 (PHRESCO) and H2020-ICT-2017-1-780997 (plaCMOS).
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 ${mu}$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world. A large-scale two-dimensional array of coherent detector pixels operating as a light detection and ranging (LiDAR) system could serve as a universal 3D imaging platform. Such a system would offer high depth accuracy and immunity to interference from sunlight, as well as the ability to directly measure the velocity of moving objects. However, due to difficulties in providing electrical and photonic connections to every pixel, previous systems have been restricted to fewer than 20 pixels. Here, we demonstrate the first large-scale coherent detector array consisting of 512 ($32 times 16$) pixels, and its operation in a 3D imaging system. Leveraging recent advances in the monolithic integration of photonic and electronic circuits, a dense array of optical heterodyne detectors is combined with an integrated electronic readout architecture, enabling straightforward scaling to arbitrarily large arrays. Meanwhile, two-axis solid-state beam steering eliminates any tradeoff between field of view and range. Operating at the quantum noise limit, our system achieves an accuracy of $3.1~mathrm{mm}$ at a distance of 75 metres using only $4~mathrm{mW}$ of light, an order of magnitude more accurate than existing solid-state systems at such ranges. Future reductions of pixel size using state-of-the-art components could yield resolutions in excess of 20 megapixels for arrays the size of a consumer camera sensor. This result paves the way for the development and proliferation of low cost, compact, and high performance 3D imaging cameras.
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