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Register a new userEngineering Effects of Vacuum Fluctuations on Two-dimensional Semiconductors
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The resonance energy and the transition rate of atoms, molecules and solids were understood as their intrinsic properties in classical electromagnetism. With the development of quantum electrodynamics, it is realized that these quantities are linked to the coupling of the transition dipole and the quantum vacuum. Such effects can be greatly amplified in macroscopic many-body systems from virtual photon exchange between dipoles, but are often masked by inhomogeneity and pure dephasing, especially in solids. Here, we observe an exceptionally large renormalization of exciton resonance and radiative decay rate in transition metal dichalcogenides monolayers due to interactions with the vacuum in both absorption and emission spectroscopy. Tuning the vacuum energy density near the monolayer, we demonstrate control of cooperative Lamb shift, radiative decay, and valley polarization as well as control of the charged exciton emission. Our work establishes a simple and robust experimental system for vacuum engineering of cooperative matter-light interactions.
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Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current crowding that leads to increased contact resistance. We developed a model to separate the contribution of the current crowding from the intrinsic contact resistivity. We show that current crowding can be alleviated by doping and contact patterning. Using Landauer-Buttiker formalism, we show that van der Waals (vdW) gap at the interface will ultimately limit the electrical contact resistance. We compare our models with experimental data for doped and undoped MoS_{2} FETs. Even with heavy charge-transfer doping of > 2x10^{13} cm^{-2}, we show that the state-of-the-art contact resistance is 100 times larger than the ballistic limit. Our study highlights the need to develop efficient interface to achieve contact resistance of < 10 {Omega}.{mu}m, which will be ideal for extremely scaled devices.
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