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Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics emerges as a cutting-edge field in the magnetic community. The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property changes. Herein, the state of the art of antiferromagnetic spintronics is presented. Subsequently, the history of ferromagnetic/ferroelectric multiferroic composites is briefly revisited. Finally, we introduce an ultralow-power, long-range, and magnetic-field-insensitive approach for harnessing antiferromagnetic spins based on our recent experimental progress, i.e., piezoelectric strain control. Relevant theoretical and experimental studies have formed an attractive new branch in antiferromagnetic spintronics, which we coin as antiferromagnetic piezospintronics.
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In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.
Spintronics, since its inception, has mainly focused on ferromagnetic materials for manipulating the spin degree of freedom in addition to the charge degree of freedom, whereas much less attention has been paid to antiferromagnetic materials. Thanks to the advances of micro-nano-fabrication techniques and the electrical control of the Neel order parameter, antiferromagnetic spintronics is booming as a result of abundant room temperature materials, robustness against external fields and dipolar coupling, and rapid dynamics in the terahertz regime. For the purpose of applications of antiferromagnets, it is essential to have a comprehensive understanding of the antiferromagnetic dynamics at the microscopic level. Here, we first review the general form of equations that govern both antiferromagnetic and ferrimagnetic dynamics. This general form unifies the previous theories in the literature. We also provide a survey for the recent progress related to antiferromagnetic dynamics, including the motion of antiferromagnetic domain walls and skyrmions, the spin pumping and quantum antiferromagnetic spintronics. In particular, open problems in several topics are outlined. Furthermore, we discuss the development of antiferromagnetic quantum magnonics and its potential integration with modern information science and technology.
The two-dimensional Heisenberg exchange model with out-of-plane anisotropy and a Dzyaloshinskii-Moriya interaction is employed to investigate the lifetime and stability of antiferromagnetic (AFM) skyrmions as a function of temperature and external magnetic field. An isolated AFM skyrmion is metastable at zero temperature in a certain parameter range set by two boundaries separating the skyrmion state from the uniform AFM phase and a stripe domain phase. The distribution of the energy barriers for the AFM skyrmion decay into the uniform AFM state complements the zero-temperature stability diagram and demonstrates that the skyrmion stability region is significantly narrowed at finite temperatures.We show that the AFM skyrmion stability can be enhanced by an application of magnetic field, whose strength is comparable to the spin-flop field. This stabilization of AFM skyrmions in external magnetic fields is in sharp contrast to the behavior of their ferromagnetic counterparts. Furthermore, we demonstrate that the AFM skyrmions are stable on timescales of milliseconds below 50 K for realistic material parameters, making it feasible to observe them in modern experiments.
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between domains with differing order parameter orientations - is a key ingredient for advancing such antiferromagnetic spintronics technologies. However, studies of the intrinsic mechanics of individual antiferromagnetic DWs remain elusive since they require sufficiently pure materials and suitable experimental approaches to address DWs on the nanoscale. Here we nucleate isolated, 180{deg} DWs in a single-crystal of Cr$_2$O$_3$, a prototypical collinear magnetoelectric antiferromagnet, and study their interaction with topographic features fabricated on the sample. We demonstrate DW manipulation through the resulting, engineered energy landscape and show that the observed interaction is governed by the DWs elastic properties. Our results advance the understanding of DW mechanics in antiferromagnets and suggest a novel, topographically defined memory architecture based on antiferromagnetic DWs.
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