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Register a new userProximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$
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Added by
Felix L\\\"upke Dr.
Publication date
2019
fields
Physics
and research's language is
English
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The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.
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A monolayer of WTe$_2$ has been shown to display quantum spin Hall (QSH) edge modes persisting up to 100~K in transport experiments. Based on density-functional theory calculations and symmetry-based model building including the role of correlations and substrate support, we develop an effective electronic model for WTe$_2$ which fundamentally differs from other prototypical QSH settings: we find that the extraordinary robustness of quantum spin Hall edge modes in WTe$_2$ roots in a glide symmetry due to which the topological gap opens away from high-symmetry points in momentum space. While the indirect bulk gap is much smaller, the glide symmetry implies a large direct gap of up to 1~eV in the Brillouin zone region of the dispersing edge modes, and hence enables sharply boundary-localized QSH edge states depending on the specific boundary orientation.
The two-dimensional topological insulators (2DTI) host a full gap in the bulk band, induced by spin-orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, the SOC-induced gap is usually small, and it is challenging to suppress the bulk conductance and thus to realize the quantum spin Hall (QSH) effect. In this study, we find a novel mechanism to effectively suppress the bulk conductance. By using the quasiparticle interference (QPI) technique with scanning tunneling spectroscopy (STS), we demonstrate that the QSH candidate single-layer 1T-WTe$_2$ has a semi-metal bulk band structure with no full SOC-induced gap. Surprisingly, in this two-dimensional system, we find the electron interactions open a Coulomb gap which is always pinned at the Fermi energy (E$_F$). The opening of the Coulomb gap can efficiently diminish the bulk state at the E$_F$ and is in favor of the observation of the quantized conduction of topological edge states.
Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekule deformation and symmetry breaking. The present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) 1T-WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS), to study twisted bilayer (tBL) WTe$_2$ with three different orientations and compare it to a topologically trivial as-grown bilayer. We observe the characteristic spectroscopic signature of the QSH edge state in the twisted bilayers, including along a coinciding edge where two sets of QSH edge states sit on top of the other. By comparing our experimental observations to first principles calculations, we conclude that the twisted bilayers are weakly coupled, preserving the QSH states and preventing back scattering.
Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale.
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