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Register a new userProximity Enhanced Quantum Spin Hall State in Graphene
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Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekule deformation and symmetry breaking. The present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.
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The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.
We find that quantum spin Hall (QSH) state can be obtained on a square-like or rectangular lattice, which is generalized from two-dimensional (2D) transition metal dichalcogenide (TMD) haeckelites. Band inversion is shown to be controled by hopping parameters and results in Dirac cones with opposite or same vorticity when spin-orbit coupling (SOC) is not considered. Effective k$cdot$p model has been constructed to show the merging or annihilation of these Dirac cones, supplemented with the intuitive pseudospin texture. Similar to graphene based honeycomb lattice system, the QSH insulator is driven by SOC, which opens band gap at the Dirac cones. We employ the center evolution of hybrid Wannier function from Wilson-loop method, as well as the direct integral of Berry curvature, to identify the $Z_2$ number. We hope our detailed analysis will stimulate further efforts in searching for QSH insulators in square or rectangular lattice, in addition to the graphene based honeycomb lattice.
Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust long-distance spin transport through an AFMI, in our case the gate-controlled, canted antiferromagnetic (CAF) state that appears at the charge neutrality point of graphene in the presence of an external magnetic field. Utilizing gate-controlled quantum Hall (QH) edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across a 5 micron-long, insulating channel only when it is biased into the nu=0 CAF state. Among possible transport mechanisms, spin superfluidity in an antiferromagnetic state gives the most consistent interpretation of the non-local signals dependence on magnetic field, temperature and filling factors. This work also demonstrates that graphene in the QH regime is a powerful model system for fundamental studies of antiferromagnetic, and in the case of a large in-plane field, ferromagnetic spintronics.
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.
We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ u^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.
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