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Register a new userAu-Ge alloys for wide-range low-temperature on-chip thermometry
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We present results of a Au-Ge alloy that is useful as a resistance-based thermometer from room temperature down to at least SI{0.2}{kelvin}. Over a wide range, the electrical resistivity of the alloy shows a logarithmic temperature dependence, which simultaneously retains the sensitivity required for practical thermometry while also maintaining a relatively modest and easily-measurable value of resistivity. We characterize the sensitivity of the alloy as a possible thermometer and show that it compares favorably to commercially-available temperature sensors. We experimentally identify that the characteristic logarithmic temperature dependence of the alloy stems from Kondo-like behavior induced by the specific heat treatment it undergoes.
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The Coulomb Blockade Thermometer (CBT) is a primary thermometer for cryogenic temperatures, with demonstrated operation from below 1 mK up to 60 K. Its performance as a primary thermometer has been verified at temperatures from 20 mK to 200 mK at uncertainty level below 1 % (k = 2). In a new project, our aim is to extend the metrologically verified temperature range of the primary CBT up to 25 K. We also demonstrate close-to-ideal operation of a CBT with only two tunnel junctions when the device is embedded in a low-impedance environment.
We demonstrate experimentally that disorder enhanced Andreev current in a tunnel junction between a normal metal and a superconductor provides a method to measure electronic temperature, specifically at temperatures below 200 mK when aluminium is used. This Andreev thermometer has some advantages over conventional quasiparticle thermometers: for instance, it does not conduct heat and its reading does not saturate until at lower temperatures. Another merit is that the responsivity is constant over a wide temperature range.
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to affect the film morphology and structure leading to the low temperature (LT) ``electronic growth of metals on semiconductors. In particular, layer-by-layer growth of Pb(111) films has been reported for deposition on Ge(001) below 130 K. An extremely flat morphology is preserved throughout deposition from four up to a dozen of monolayers. These flat films are shown to be metastable and to reorganize into large clusters uncovering the first Pb layer, pseudomorphic to the substrate, already at room temperature. Indications of QSE induced structural variations of the growing films have been reported for Pb growth on Ge(001), where the apparent height of the Pb(111) monatomic step was shown to change in an oscillatory fashion by He atom scattering (HAS) during layer-by-layer growth. The extent of the structural QSE has been obtained by a comparison of the HAS data with X-ray diffraction (XRD) and reflectivity experiments. Whereas step height variations as large as 20 % have been measured by HAS reflectivity, the displacement of the atomic planes from their bulk position, as measured by XRD, has been found to mainly affect the topmost Pb layer, but with a lower extent, i.e. the QSE observed by HAS are mainly due to a perpendicular displacement of the topmost layer charge density. The effect of the variable surface relaxation on the surface vibration has been studied by inelastic HAS to measure the acoustic dispersion of the low energy phonons.
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