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Register a new userHeavily $n$-doped Ge: low-temperature magnetoresistance properties
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We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications
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High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. The exact mechanism by which these enhancements result; however, is unclear. In order to further investigate the effects of chemical substitution on the materials thermoelectric properties, we have prepared and performed various measurements on $CuAgSe$ samples doped with Co and Cr according to the following compositional formulas: $Cu_{1-x}Co_{x}AgSe$ $(x=0.02, 0.05, 0.10)$ and $Cu_{1-x}Cr_{x}AgSe$ $(x=0.02, 0.05)$. Measurements of temperature and magnetic field dependent thermal conductivity, electrical resistivity, and Seebeck coefficient will be discussed. Our results reveal a remarkable sensitivity of $CuAgSe$s thermoelectric properties to chemical doping in general as well as a particular sensitivity to specific dopants. This demonstrated tunability of $CuAgSe$s various properties furthers the case that high mobility phonon glass-semimetals are strong candidates for potential low temperature thermoelectric applications.
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) and large remanent magnetization (Mr/MS = 71%) have been observed for a (In1-x,Fex)Sb thin film with x = 35%. Our results indicate that the n-type ferromagnetic semiconductor (In1-x,Fex)Sb is very promising for spintronics devices operating at room temperature.
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer widely tunable optical and electronic properties, doping has proven elusive. This arises both from the synthetic challenge of how to introduce single impurities and from a lack of fundamental understanding of this heavily doped limit under strong quantum confinement. We develop a method to dope semiconductor nanocrystals with metal impurities providing control of the band gap and Fermi energy. A combination of optical measurements, scanning tunneling spectroscopy and theory revealed the emergence of a confined impurity band and band-tailing. Successful control of doping and its understanding provide n- and p-doped semiconductor nanocrystals which greatly enhance the potential application of such materials in solar cells, thin-film transistors, and optoelectronic devices.
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Delta_{1}$ transition by advanced textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Delta_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+Delta_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+Delta_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.
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