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Register a new userA highly sensitive magnetic sensor using a 2D van der Waals ferromagnetic material
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Two-dimensional (2D) van der Waals ferromagnetic materials are emerging as promising candidates for applications in ultra-compact spintronic nanodevices, nanosensors, and information storage. Our recent discovery of the strong room temperature ferromagnetism in single layers of VSe2 grown on graphite or MoS2 substrate has opened new opportunities to explore these ultrathin magnets for such applications. In this paper, we present a new type of magnetic sensor that utilizes the single layer VSe2 film as a highly sensitive magnetic core. The sensor relies in changes in resonance frequency of the LC circuit composed of a soft ferromagnetic microwire coil that contains the ferromagnetic VSe2 film subject to applied DC magnetic fields. The sensitivity of the sensor reaches an extremely high value of 16x10^6 Hz/Oe, making it an excellent candidate for a wide range of magnetic sensing applications.
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Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect through non-local measurements. Zeeman splitting field estimation demonstrates a significant magnetic proximity exchange field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R_(XX,D)with increasing magnetic field at { u} = 0 may attribute to the MPE induced new ground state phases. This MPE revealed in our CrBr3/graphene van der Waals heterostructures therefore provides a solid physics basis and key functionality for next generation 2D spin logic and memory devices.
Recently, two-dimensional ferromagnetism in the family of Chromium compounds $rm CrXTe_3 (X=Si, Ge)$ has attracted a broad research interest. Despite the structural similarity in $rm CrTe_6$ octahedra, the size effect of inserted Ge or Si dimer contributes to significant differences in magnetism. Here, we report a new quaternary van der Waals ferromagnetic material $rm CrGe_{delta}Si_{1-delta}Te_3$ synthesized by flux method. Ge substitution in Si site results in the lattice expansion, further increasing the Curie temperature and reducing the magnetic anisotropy. The critical behavior of $rm Cr_{0.96}Ge_{0.17}Si_{0.82}Te_3$ has been studied by specific heat as well as magnetization measurements. And the extracted critical exponents are self-consistent and well-obeying the scaling laws, which are closer to the 2D Ising model with interaction decaying as $J(r)approx r^{-3.44}$.
Recent developments in two-dimensional (2D) magnetism have motivated the search for novel van-der Waals (vdWs) magnetic materials to explore new magnetic phenomenon in the 2D limit. Metal thiophosphates, MPX3, is a class of magnetic vdWs materials with antiferromagnetic (AFM) ordering persisting down to the atomically thin limit. The magnetism in this material family has been found to be highly dependent on the choice of transition metal M. In this work, we have synthesized the intermediate compounds Ni1-xMnxPS3 (0 < x < 1) and investigated their magnetic properties. Our study reveals that the variation of Ni and Mn content in Ni1-xMnxPS3 can efficiently tune the spin-flop transition, likely due to the modulation of the magnetic anisotropy. Such effective tunning offers a promising candidate to engineer 2D magnetism for future device applications.
We report structural, physical properties and electronic structure of van der Waals (vdW) crystal VI3. Detailed analysis reveals that VI3 exhibits a structural transition from monoclinic C2/m to rhombohedral R-3 at Ts ~ 79 K, similar to CrX3 (X = Cl, Br, I). Below Ts, a long-range ferromagnetic (FM) transition emerges at Tc ~ 50 K. The local moment of V in VI3 is close to the high-spin state V3+ ion (S = 1). Theoretical calculation suggests that VI3 may be a Mott insulator with the band gap of about 0.84 eV. In addition, VI3 has a relative small interlayer binding energy and can be exfoliated easily down to few layers experimentally. Therefore, VI3 is a candidate of two-dimensional FM semiconductor. It also provides a novel platform to explore 2D magnetism and vdW heterostructures in S = 1 system.
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and {pi} phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.
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