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Register a new userStructure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes
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Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.
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We investigate the electronic band structure of an undoped graphene armchair nanoribbon. We demonstrate that such nanoribbon always has a gap in its electronic spectrum. Indeed, even in the situations where simple single-electron calculations predict a metallic dispersion, the system is unstable with respect to the deformation of the carbon-carbon bonds dangling at the edges of the armchair nanoribbon. The edge bonds deformation couples electron and hole states with equal momentum. This coupling opens a gap at the Fermi level. In a realistic sample, however, it is unlikely that this instability could be observed in its pure form. Namely, since chemical properties of the dangling carbon atoms are different from chemical properties of the atoms inside the sample (for example, the atoms at the edge have only two neighbours, besides additional non-carbon atoms might be attached to passivate unpaired covalent carbon bonds), it is very probable that the bonds at the edge are deformed due to chemical interactions. This chemically-induced modification of the nanoribbons edges can be viewed as an effective field biasing our predicted instability in a particular direction. Yet by disordering this field (e.g., through random substitution of the radicals attached to the edges) we may tune the system back to the critical regime and vary the electronic properties of the system. For example, we show that electrical transport through a nanoribbon is strongly affected by such disorder.
Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance of graphene is a major constrain for many of these applications. Here we propose a new approach to achieve low sheet resistance in large-scale CVD monolayer graphene using non-volatile ferroelectric polymer gating. In this hybrid structure, large-scale graphene is heavily doped up to 3{times}1013 cm-2 by non-volatile ferroelectric dipoles, yielding a low sheet resistance of 120 {Omega}{Box} at ambient conditions. The graphene-ferroelectric transparent conductors (GFeTCs) exhibit more than 95% transmittance from the visible to the near infrared range owing to the highly transparent nature of the ferroelectric polymer. Together with its excellent mechanical flexibility, chemical inertness and the simple fabrication process of ferroelectric polymers, the proposed GFeTCs represent a new route towards large-scale graphene based transparent electrodes and optoelectronics.
Electronic transport in a zig-zag-edge graphene nanoribbon (GNR) and its modification by adsorbed transition metal porphyrins is studied by means of density functional theory calculations. The detachment reaction of the metal centre of the porphyrin is investigated both in the gas phase and for molecules adsorbed on the GNR. As most metal porphyrins are very stable against this reaction, it is found that these molecules bind only weakly to a perfect nanoribbon. However, interaction with a single-atom vacancy in the GNR results in chemical bonding by the transition metal centre being shared between nitrogen atoms in the porphyrin ring and the carbon atoms next to the vacancy in the GNR. For both the physisorbed and the chemisorbed geometry, the inclusion of van der Waals interaction results in a significant enlargement of the binding energy and reduction of the adsorption height. Electronic transport calculations using non-equilibrium Greens functions show that the conductivity of the GNR is altered by the chemisorbed porphyrin molecules. Since the metal centers of porphyrins carry an element-specific magnetic moment, not only the net conductance, but also the spin-dependent conductance of the GNR is affected. In particular, the adsorption of Ru-porphyrin on the single-atom vacancy results in a very large spin polarization of the current of 88% at small applied source-drain voltages. Based on our results, we suggest that a spin valve constructed from a GNR with ferromagnetic contacts could be used as a sensitive detector that could discriminate between various metal porphyrins.
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Greens Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.
Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or scotch-tape method) from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM) and Raman Spectroscopy. Electrical terminals are deposited on MLGs in a four-probe configuration by electron-beam lithography, gold/titanium thermal evaporation, and lift-off. The electrical resistance is measured from room temperature down to 2 K. The electrical resistance of the MLGs shows an increase with decreasing temperature, and then decreases after reaching a maximum value. These results are compared with recent experimental and theoretical data from the literature.
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