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Register a new userTungsten Boride: a 2D Multiple Dirac Semimetal for Hydrogen Evolution Reaction
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Here, we propose a two-dimensional tungsten boride (WB4) lattice, with the Gibbs free energy for the adsorption of atomic hydrogen, tending to be the ideal value of 0 eV at 3% strained state, to host a better hydrogen evolution reaction activity. Based on first-principles calculations, it is demonstrated that the multiple d-p-pi and d-p-sigma Dirac conjugations of WB4 lattice ensures its excellent electronic transport characteristics. Meanwhile, coupling with the d-orbitals of W, the p-orbitals of borophene subunits in WB4 lattice can modulate the d band center to get a good HER performance. Our results not only provide a versatile platform for hosting multiple Dirac semimetal states with a sandwich configuration, but also offer a guiding principle for discovering the relationship between intrinsic properties of the active centre and the catalytic activity of metal layer from the emerging field of low-dimensional noble-metal-free lattices.
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The d-band center descriptor based on the adsorption strength of adsorbate has been widely used in understanding and predicting the catalytic activity in various metal catalysts. However, its applicability is unsure for the single-atom-anchored two-dimensional (2D) catalysts. Here, taking the hydrogen (H) adsorption on the single-atom-anchored 2D basal plane as example, we examine the influence of orbitals interaction on the bond strength of hydrogen adsorption. We find that the adsorption of H is formed mainly via the hybridization between the 1s orbital of H and the vertical dz2 orbital of anchored atoms. The other four projected d orbitals (dxy/dx2-y2, dxz/dyz) have no contribution to the H chemical bond. There is an explicit linear relation between the dz2-band center and the H bond strength. The dz2-band center is proposed as an activity descriptor for hydrogen evolution reaction (HER). We demonstrate that the dz2-band center is valid for the single-atom active sites on a single facet, such as the basal plane of 2D nanosheets. For the surface with multiple facets, such as the surface of three-dimensional (3D) polyhedral nanoparticles, the d-band center is more suitable.
The favourable properties of tungsten borides for shielding the central High Temperature Superconductor (HTS) core of a spherical tokamak fusion power plant are modelled using the MCNP code. The objectives are to minimize the power deposition into the cooled HTS core, and to keep HTS radiation damage to acceptable levels by limiting the neutron and gamma fluxes. The shield materials compared are W2B, WB, W2B5 and WB4 along with a reactively sintered boride B0.329C0.074Cr0.024Fe0.274W0.299, monolithic W and WC. Of all these W2B5 gave the most favourable results with a factor of ~10 or greater reduction in neutron flux and gamma energy deposition as compared to monolithic W. These results are compared with layered water-cooled shields, giving the result that the monolithic shields, with moderating boron, gave comparable neutron flux and power deposition, and (in the case of W2B5) even better performance. Good performance without water-coolant has advantages from a reactor safety perspective due to the risks associated with radio-activation of oxygen. 10B isotope concentrations between 0 and 100% are considered for the boride shields. The naturally occurring 20% fraction gave much lower energy depositions than the 0% fraction, but the improvement largely saturated beyond 40%. Thermophysical properties of the candidate materials are discussed, in particular the thermal strain. To our knowledge, the performance of W2B5 is unrivalled by other monolithic shielding materials. This is partly as its trigonal crystal structure gives it higher atomic density compared with other borides. It is also suggested that its high performance depends on it having just high enough 10B content to maintain a constant neutron energy spectrum across the shield.
The presence of elemental vacancies in materials is inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for specific applications is a challenge. Here we report a facile method for creating large concentrations of S vacancies in the inert basal plane of MoS2 supported on semimetal CoMoP2. With a small applied potential, S atoms can be removed in the form of H2S due to the optimized free energy of formation. The existence of vacancies favors electron injection from the electrode to the active site by decreasing the contact resistance. As a consequence, the activity is increased by 221 % with the vacancy-rich MoS2 as electrocatalyst for hydrogen evolution reaction (HER). A small overpotential of 75 mV is needed to deliver a current density of 10 mA cm-2, which is considered among the best values achieved for MoS2. It is envisaged that this work may provide a new strategy for utilizing the semimetal phase for structuring MoS2 into a multi-functional material.
We present a prediction of the Dirac semimetal (DSM) phase in MgTa2N3 based on first-principles calculations and symmetry analysis. In this material, the Fermi level is located exactly at the Dirac point without additional Fermi surface pockets. The band inversion associated with the Dirac cone involves the d orbitals of two structurally inequivalent Ta atoms with octahedral and trigonal prismatic coordination spheres. We further show that the lattice symmetry breaking can realize topological phase transitions from the DSM phase to a triple nodal point semimetal, Weyl semimetal or topological insulator. The topologically protected surface states and the non-protected Fermi arc surface states are also studied.
Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies on the electronic structure of KMgBi single crystal by combining angle-resolve photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS). The flat band was clearly observed near the Fermi level. We also revealed a small bandgap of ~ 20 meV between the flat band and the conduction band. These results demonstrate the critical state of KMgBi that transitions among various types of Dirac fermions can be tuned in one system.
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