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Register a new userObservation of the Critical State to Multiple-Type Dirac Semimetal Phases in KMgBi
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Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies on the electronic structure of KMgBi single crystal by combining angle-resolve photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS). The flat band was clearly observed near the Fermi level. We also revealed a small bandgap of ~ 20 meV between the flat band and the conduction band. These results demonstrate the critical state of KMgBi that transitions among various types of Dirac fermions can be tuned in one system.
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Band-crossings occurring on a mirror plane are compelled to form a nodal loop in the momentum space without spin-orbit coupling (SOC). In the presence of other equivalent mirror planes, multiple such nodal loops can combine to form interesting nodal-link structures. Here, based on first-principles calculations and an effective $mathbf{k.p}$ model analysis, we show that CaAuAs hosts a unique starfruit-like nodal-link structure in the bulk electronic dispersion in the absence of SOC. This nodal-link is comprised of three nodal loops, which cross each other at the time-reversal-invariant momentum point $A$. When the SOC is turned on, the nodal loops are gapped out, resulting in a stable Dirac semimetal state with a pair of Dirac points along the $mathrm{Gamma-A}$ direction in the Brillouin zone. The Dirac points are protected by the combination of time reversal, inversion, and $C_3$ rotation symmetries. We show how a systematic elimination of the symmetry constraints yields a Weyl semimetal and eventually a topological insulator state.
As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices.
Dirac semimetal (DSM) hosts four-fold degenerate isolated band-crossing points with linear dispersion, around which the quasiparticles resemble the relativistic Dirac Fermions. It can be described by a 4 * 4 massless Dirac Hamiltonian which can be decomposed into a pair of Weyl points or gaped into an insulator. Thus, crystal symmetry is critical to guarantee the stable existence. On the contrary, by breaking crystal symmetry, a DSM may transform into a Weyl semimetal (WSM) or a topological insulator (TI). Here, by taking hexagonal LiAuSe as an example, we find that it is a starfruit shaped multiple nodal chain semimetal in the absence of spin-orbit coupling(SOC). In the presence of SOC, it is an ideal DSM naturally with the Dirac points locating at Fermi level exactly, and it would transform into WSM phase by introducing external Zeeman field or by magnetic doping with rare-earth atom Sm. It could also transform into TI state by breaking rotational symmetry. Our studies show that DSM is a critical point for topological phase transition, and the conclusion can apply to most of the DSM materials, not limited to the hexagonal material LiAuSe.
The study of electronic properties in topological systems is one of the most fascinating topics in condensed matter physics, which has generated enormous interests in recent times. New materials are frequently being proposed and investigated to identify their non-trivial band structure. While sophisticated techniques such as angle-resolved photoemission spectroscopy have become popular to map the energy-momentum relation, the transport experiments lack any direct confirmation of Dirac and Weyl fermions in a system. From band structure calculations, VAl$_{3}$ has been proposed to be a type II topological Dirac semimetal. This material represents a large family of isostructural compounds, all having similar electronic band structure and is an ideal system to explore the rich physics of Lorentz symmetry violating Dirac fermions. In this work, we present a detailed analysis on the magnetotransport properties of VAl$_{3}$. A large, non-saturating magnetoresistance has been observed. Hall resistivity reveals the presence of two types of charge carriers with high mobility. Our measurements show a large planar Hall effect in this material, which is robust and can be easily detectable up to high temperature. This phenomenon originates from the relativistic chiral anomaly and non-trivial Berry curvature, which validates the theoretical prediction of the Dirac semimetal phase in VAl$_{3}$.
The three-dimensional topological semimetals represent a new quantum state of matter. Distinct from the surface state in the topological insulators that exhibits linear dispersion in two-dimensional momentum plane, the three-dimensional semimetals host bulk band dispersions linearly along all directions, forming discrete Dirac cones in three-dimensional momentum space. In addition to the gapless points (Weyl/Dirac nodes) in the bulk, the three-dimensional Weyl/Dirac semimetals are also characterized by topologically protected surface state with Fermi arcs on their specific surface. The Weyl/Dirac semimetals have attracted much attention recently they provide a venue not only to explore unique quantum phenomena but also to show potential applications. While Cd3As2 is proposed to be a viable candidate of a Dirac semimetal, more experimental evidence and theoretical investigation are necessary to pin down its nature. In particular, the topological surface state, the hallmark of the three-dimensional semimetal, has not been observed in Cd3As2. Here we report the electronic structure of Cd3As2 investigated by angle-resolved photoemission measurements on the (112) crystal surface and detailed band structure calculations. The measured Fermi surface and band structure show a good agreement with the band structure calculations with two bulk Dirac-like bands approaching the Fermi level and forming Dirac points near the Brillouin zone center. Moreover, the topological surface state with a linear dispersion approaching the Fermi level is identified for the first time. These results provide strong experimental evidence on the nature of topologically non-trivial three-dimensional Dirac cones in Cd3As2.
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