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Register a new userManipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials
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Added by
Shunsuke Sakuragi Dr.
Publication date
2019
fields
Physics
and research's language is
English
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The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO$_{3-x}$/Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO$_{3-x}$ substrate.
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Ferromagnetism was observed in a Pt(100) ultrathin film deposited on a SrTiO3(100) substrate. The ferromagnetism, which appears in films with thicknesses of 2.2-4.4 nm, periodically changes with a period of approximately 1 nm (5-6 monolayers) depending on the film thickness. This is consistent with the period derived from the quantum-well states formed in the thin film. X-ray magnetic circular dichroism measurements show the evidence of appearance of intrinsic ferromagnetism in Pt(100) ultra-thin film. In addition, present results suggest a possibility that the orbital magnetic moment of pure Pt is much smaller than that of the Pt/ferromagnetic multilayer system. These results will provide a potential new mechanism for origin of the large magnetic anisotropy in Pt components.
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers.
Magnetization reversal mechanisms and depth-dependent magnetic profile have been investigated in Co/Pd thin films magnetron-sputtered under continuously varying pressure with opposite deposition orders. For samples grown under increasing pressure, magnetization reversal is dominated by domain nucleation, propagation and annihilation; an anisotropy gradient is effectively established, along with a pronounced depth-dependent magnetization profile. However, in films grown under decreasing pressure, disorders propagate vertically from the bottom high-pressure region into the top low-pressure region, impeding domain wall motion and forcing magnetization reversal via rotation; depth-dependent magnetization varies in an inverted order, but the spread is much suppressed.
We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.
We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a pseudomorphic film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a maximum thickness of 10 Ni layers (two of them intermixed with the substrate), where a new fcc bulk-like phase is formed. After the formation of the bulk-like Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulk-like phase within the pseudomorphic one, i.e. the bulk-like fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the strong increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulk-like fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 Angstrom (i.e. about 17 layers).
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