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Register a new userWell-localized edge states in two-dimensional topological insulators: ultrathin Bi films
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We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.
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We investigate in a fully quantum-mechanical manner how the many-body excitation spectrum of topological insulators is affected by the presence of long-range Coulomb interactions. In the one-dimensional Su-Schrieffer-Heeger model and its mirror-symmetric variant strongly localized plasmonic excitations are observed which originate from topologically non-trivial single-particle states. These textit{topological plasmons} inherit some of the characteristics of their constituent topological single-particle states, but they are not equally well protected against disorder due to the admixture of non-topological bulk single-particle states in the polarization function. The strength of the effective Coulomb interactions is also shown to have strong effects on the plasmonic modes. Furthermore, we show how external modifications via dielectric screening and applied electric fields with distinct symmetries can be used to study topological plasmons, thus allowing for experimental verification of our atomistic predictions.
Freestanding single-bilayer Bi(111) is a two-dimensional topological insulator with edge states propagating along its perimeter. Given the interlayer coupling experimentally, the topological nature of Bi(111) thin films and the impact of the supporting substrate on the topmost Bi bilayer are still under debate. Here, combined with scanning tunneling microscopy and first-principles calculations, we systematically study the electronic properties of Bi(111) thin films grown on a NbSe2 substrate. Two types of non-magnetic edge structures, i.e., a conventional zigzag edge and a 2x1 reconstructed edge, coexist alternately at the boundaries of single bilayer islands, the topological edge states of which exhibit remarkably different energy and spatial distributions. Prominent edge states are persistently visualized at the edges of both single and double bilayer Bi islands, regardless of the underlying thickness of Bi(111) thin films. We provide an explanation for the topological origin of the observed edge states that is verified with first-principles calculations. Our paper clarifies the long-standing controversy regarding the topology of Bi(111) thin films and reveals the tunability of topological edge states via edge modifications.
The presence of inherently strong spin-orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac fermion states in the odd-bilayer (BL) films, originating from dangling $p_z$ orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-$T_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+delta}$ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.
Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger electrical conductivity. As a consequence, a room temperature value exceeding 3.0 could be achieved for both p- and n-type systems when the relaxation time ratio between the edge and the bulk states is tuned to be 1000. Our theoretical study suggests that the utilization of topological edge states might be a promising approach to cross the threshold of the industrial application of thermoelectricity.
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present microdevices fabricated with focused ion beam from indium-doped topological insulator Pb1-xSnxTe. With device thickness on the order of 1 {mu}m and an extremely large bulk resistivity, we achieve an unprecedented enhancement of the surface contribution to about 30% of the total conductance near room temperature. The surface contribution increases as the temperature is reduced, becoming dominant below approximately 180 K, compared to 30 K in mm-thickness crystals. In addition to the enhanced surface contribution to normal-state transport, we observe the emergence of a two-dimensional superconductivity below 6 K. Measurements of magnetoresistivity at high magnetic fields reveal a weak antilocalization behavior in the normal-state magnetoconductance at low temperature and a variation in the power-law dependence of resistivity on temperature with field. These results demonstrate that interesting electrical response relevant to practical applications can be achieved by suitable engineering of single crystals.
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