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Register a new userLiquid tin droplet fragmentation by ultra-short laser pulse
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The fragmentation of a liquid metal droplet induced by a nanosecond laser pulse has been studied well. However, the fragmentation mechanism may be different, when a subpicosecond laser pulse is applied. To discover the details of the fragmentation process, we perform a hydrodynamic simulation of a liquid tin droplet irradiated by a femtosecond laser pulse. We have found that the pressure pulse induced by an instantaneous temperature growth in the skin layer propagates from the one side of the surface of a spherical droplet and focuses in its center; at the release a big cavity is formed at the center of a droplet; the pressure wave release at the backside surface may cause the spallation.
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Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectroscopy and optoelectronic measurements in photodetectors based on thin GaSe to study its long-term stability. We found that the GaSe flakes exposed to air tend to decompose forming firstly amorphous selenium and Ga2Se3 and subsequently Ga2O3. While the first stage is accompanied by an increase in photocurrent, in the second stage we observe a decrease in photocurrent which leads to the final failure of GaSe photodetectors. Additionally, we found that the encapsulation of the GaSe photodetectors with hexagonal boron nitride (h-BN) can protect the GaSe from degradation and can help to achieve long-term stability of the devices.
We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction due to photo-excited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of free standing Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart of classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to negative volume of melting of modeled Si material, -7.5%, the material contracts upon the phase transition, relaxes the compressive stresses and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. On the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with fcc crystal structure.
Binary tin sulfides are appealing because of their simple stoichiometry and semiconducting properties and are potentially cost-effective optoelectronic materials. The multivalency of Sn allows yet more intermediate compositions, Sn$_x$S$_y$, whose structures and properties are of interest.Sn$_2$S$_3$ is already under consideration as a mixed-valence semiconductor. Other intermediate compositions have remained elusive. Here we report a comprehensive study of phase stability of the Sn$_x$S$_y$ series compounds, utilizing swarm-intelligence crystal structure search method combined with first-principles energetic calculations. We find that the stability of mixed-valence Sn$_x$S$_y$ compounds with respect to decomposition into pure-valence SnS and SnS$_2$ is in general weaker than the Sn$_x$O$_y$ counterparts, likely due to differences in chemical bonding. Besides identifying the experimentally discovered stable phases of Sn$_2$S$_3$, our calculations indicate that the Sn$_3$S$_4$ phase is another mixed-valence composition which shows marginal stability with respect to decomposition into SnS and SnS$_2$. Other studied compositions may be metastable under ambient conditions, with slightly positive formation enthalpies. We find two structures of Sn$_3$S$_4$ having comparably low energies, both of which feature one-dimensional chain-like fragments obtained by breaking up the edge-connected octahedral layers of SnS$_2$. Both structures indicate lattice phonon stability and one shows quasi-direct band gap with a calculated value of 1.43 eV, ideal for solar absorbers. A further analysis of the composition-structure-property relationship supports the notion that lowdimensional Sn-S motifs and van der Waals interaction may lead to diverse structure types and chemical compositions, having functional properties that are yet to be identified in the Sn$_x$S$_y$ series with mixed valency.
A 3D mechanical stable scaffold is shown to accommodate the volume change of a high specific capacity nickel-tin nanocomposite Li-ion battery anode. When the nickel-tin anode is formed on an electrochemically inactive conductive scaffold with an engineered free volume and controlled characteristic dimensions, it exhibits significantly improved the cyclability.
SnSe monolayers experience a temperature induced two-dimensional Pnm2$_1 to$ P4/nmm structural transformation precipitated by the softening of vibrational modes. The standard theoretical treatment of thermoelectricity---which relies on a zero temperature phonon dispersion and on a zero temperature electronic structure---is incapable of describing thermoelectric phenomena induced by structural transformations. Relying on structural data obtained from {em ab initio} molecular dynamics calculations that is utilized in a non-standard way to inform of electronic and vibrational transport coefficients, the present work establishes a general route to understand thermoelectricity across phase transitions. Similar to recent experimental observations pointing to an overestimated thermoelectric figure of merit $ZT$ past the transition temperature, our work indicates a smaller $ZT$ when compared to its value predicted by the standard paradigm. Its decrease is related to the dramatic changes in the electrical conductivity and lattice thermal conductivity as the structural transformation ensues. Though exemplified on a SnSe monolayer, the method does not have any built-in assumptions concerning dimensionality, and thus applicable to arbitrary thermoelectric materials in one, two, and three dimensions.
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