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Register a new userAll-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits
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Added by
Cinzia Casiraghi Dr
Publication date
2018
fields
Physics
and research's language is
English
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A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 pm 0.3 nF cm^(-2) for a dielectric thickness of sim 3 mu m and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 pm 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 pm 0.3 MV cm^(-1). Fully printed capacitors with sub-/mu m hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.
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We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper. We demonstrate that the device performance and sensitivity are strongly dependent on the printing parameter (i.e., drop- spacing, number of printing passes, etc.). We show that values of the Gauge Factor up to 125 can be obtained, with large sensitivity (>20%) even when small strains (0.3%) are applied. Furthermore, we provide preliminary examples of heterostructure-based strain sensors, enabled by the inkjet printing technology.
We report the fabrication of a low cost, and highly reproducible large scale surface-enhanced Raman spectroscopy substrate using an inkjet-printed Ag nanoparticle ink (AgNI). The AgNI SERS substrates were evaluated for SERS using BPY as a molecular probe. The printed AgNI dot arrays exhibit an excellent SERS performance and reproducibility. The batch to batch and spot to spot standard deviation value of less than 10 percent was obtained. The results reveal the reproducibility of the AgNI SERS dot arrays and its potential application for SERS substrates.
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene materials to desired substrate and device geometries. Since the method is purely additive, it exposes graphene (or other functional materials) to no chemical preparation or lithographic steps, providing greater experimental control over device environment for reproducibility and for studies of fundamental transport mechanisms. Finally, the transport properties of the graphene devices on the PET substrate demonstrate the non-universality of minimum conductivity and the incompleteness of the current transport theory.
Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive formulation processing. In addition, none of those formulations are suitable for thin-film heterostructure fabrication due to the re-mixing of different 2D crystals, giving rise to uncontrolled interfaces, which results in poor device performance and lack of reproducibility. In this work we show a general formulation engineering approach to achieve highly concentrated, and inkjet printable water-based 2D crystal formulations, which also provides optimal film formation for multi-stack fabrication. We show examples of all-inkjet printed heterostructures, such as large area arrays of photosensors on plastic and paper and programmable logic memory devices, fully exploiting the design flexibility of inkjet printing. Finally, dose-escalation cytotoxicity assays in vitro also confirm the inks biocompatible character, revealing the possibility of extending use of such 2D crystal formulations to drug delivery and biomedical applications.
Compact and robust waveguide chips are crucial for new integrated terahertz applications, such as high-speed interconnections between processors and broadband short-range wireless communications. Progress on topological photonic crystals shows potential to improve integrated terahertz systems that suffer from high losses around sharp bends. Robust terahertz topological transport through sharp bends on a silicon chip has been recently reported over a relatively narrow bandwidth. Here, we report the experimental demonstration of topological terahertz planar air-channel metallic waveguides which can be integrated into an on-chip interconnect. Our platform can be fabricated by a simple, cost-effective technique combining 3D-printing and gold-sputtering. The relative size of the measured topological bandgap is ~12.5%, which entails significant improvement over all-silicon terahertz topological waveguides (~7.8%). We further demonstrate robust THz propagation around defects and delay lines. Our work provides a promising path towards compact integrated terahertz devices as a next frontier for terahertz wireless communications.
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