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Register a new userSystematic understanding of half-metallicity of ternary compounds in Heusler and Inverse Heusler structures with 3$d$ and 4$d$ elements
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Employing {it ab initio} electronic structure calculations we extensively study ternary Heusler compounds having the chemical formula X$_2$X$^prime$Z, where X = Mn, Fe or Co; Z = Al or Si; and X$^prime$ changes along the row of 4$d$ transition metals. A comprehensive overview of these compounds, addressing the trends in structural, electronic, magnetic properties and Curie temperature is presented here along with the search for new materials for spintronics applications. A simple picture of hybridization of the $d$ orbitals of the neighboring atoms is used to explain the origin of the half-metallic gap in these compounds. We show that arrangements of the magnetic atoms in different Heusler lattices are largely responsible for the interatomic exchange interactions that are correlated with the features in their electronic structures as well as possibility of half-metallicity. We find seven half-metallic magnets with 100% spin polarization. We identify few other compounds with high spin polarisation as near half-metals which could be of potential use in applications as well. We find that the major features in the electronic structures remain intact if a 3$d$ X$^{prime}$ constituent is replaced with an isoelectronic 4$d$, implying that the total number of valence electrons can be used as a predictor of half-metallic nature in compounds from Heusler family.
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In this work, we provide important insights into the evolution of half-metallicity in quaternary Heusler alloys. Employing {it ab initio} electronic structure methods we study 18 quaternary Heusler compounds having the chemical formula CoX$^prime$Y$^prime$Al, where Y$^prime$ = Mn, Fe; and X$^prime$ a 4$d$ element. Along with the search for new materials for spintronics applications, the trends in structural, electronic, magnetic properties and Curie temperature were investigated. We have made comparative studies with the compounds in the quaternary series CoX$^{prime}$Y$^{prime}$Si with X$^{prime}$ materials from 3$d$ and 4$d$ transition metal series in the periodic table. We observe that the half-metallic behaviour depends primarily on the crystal structure type based on atomic arrangements and the number of valence electrons. As long as these two are identical, the electronic structures and the magnetic exchange interactions bear close resemblances. Consequently, the materials exhibit identical electronic properties, by and large. We analysed the roles of different transition metal atoms in affecting hybridisations and correlated them with the above observations. This work, therefore, provides important perspectives regarding the underlying physics of half-metallic behaviour in quaternary Heusler compounds which goes beyond specifics of a given material. This, thus, paves way for smart prediction of new half-metals. This work also figures out an open problem of understanding how different ternary Heuslers with different electronic behaviour may lead to half-metallic behaviour in quaternary Heuslers with 4$d$ transition metal elements.
In this paper, we investigate the half-metallicity of Heusler alloys Fe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistance measurements. It is found that, with the increase of Cr content x, the Fermi level of Fe2Co1-xCrxSi moves from the top of valence band to the bottom of conduction band, and a large half-metallic band gap of 0.75 eV is obtained for x=0.75. We then successfully synthesized a series Heusler Fe2Co1-xCrxSi polycrystalline ribbon samples. The results of X-ray diffraction indicate that the Fe2Co1-xCrxSi series of samples are pure phase with a high degree of order and the saturation magnetic moment follows half-metallic Slater-Pauling rule. Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropic magnetoresistance of Fe2Co1-xCrxSi (x=0.25, 0.5, 0.75) show a negative value suggesting they are stable half-metallic ferromagnets.
The XYZ half-Heusler crystal structure can conveniently be described as a tetrahedral zinc blende YZ structure which is stuffed by a slightly ionic X species. This description is well suited to understand the electronic structure of semiconducting 8-electron compounds such as LiAlSi (formulated Li$^+$[AlSi]$^-$) or semiconducting 18-electron compounds such as TiCoSb (formulated Ti$^{4+}$[CoSb]$^{4-}$). The basis for this is that [AlSi]$^-$ (with the same electron count as Si$_2$) and [CoSb]$^{4-}$ (the same electron count as GaSb), are both structurally and electronically, zinc-blende semiconductors. The electronic structure of half-metallic ferromagnets in this structure type can then be described as semiconductors with stuffing magnetic ions which have a local moment: For example, 22 electron MnNiSb can be written Mn$^{3+}$[NiSb]$^{3-}$. The tendency in the 18 electron compound for a semiconducting gap -- believed to arise from strong covalency -- is carried over in MnNiSb to a tendency for a gap in one spin direction. Here we similarly propose the systematic examination of 18-electron hexagonal compounds for semiconducting gaps; these would be the stuffed wurtzite analogues of the stuffed zinc blende half-Heusler compounds. These semiconductors could then serve as the basis for possibly new families of half-metallic compounds, attained through appropriate replacement of non-magnetic ions by magnetic ones. These semiconductors and semimetals with tunable charge carrier concentrations could also be interesting in the context of magnetoresistive and thermoelectric materials.
Since their discovery around a century ago, the structure and chemistry of the multi-functional half-Heusler semiconductors have been studied extensively as three component systems. The elemental groups constituting these ternary compounds with the nominal formula XYZ are well established. From the very same set of well-known elements we explore a phase space of quaternary double ($XXY_2Z_2$, $X_2YYZ_2$, and $X_2Y_2ZZ$), triple ($X_2XY_3Z_3$) and quadruple ($X_3XY_4Z_4$) half-Heusler compositions which 10 times larger in size. Using a reliable, first-principles thermodynamics methodology on a selection of 347 novel compositions, we predict 127 new stable quaternary compounds, already more than the 89 reported almost exhaustively for ternary systems. Thermoelectric performance of the state-of-the-art ternary half-Heusler compounds are limited by their intrinsically high lattice thermal conductivity ($kappa_{L}$). In comparison to ternary half-Heuslers, thermal transport in double half-Heuslers is dominated by low frequency phonon modes with smaller group velocities and limited by disorder scattering. The double half-Heusler composition Ti$_2$FeNiSb$_2$ was synthesized and confirmed to have a significantly lower lattice thermal conductivity (factor of 3 at room temperature) than TiCoSb, thereby providing a better starting point for thermoelectric efficiency optimization. We demonstrate a dependable strategy to assist the search for low thermal conductivity half-Heuslers and point towards a huge composition space for implementing it. Our findings can be extended for systematic discovery of other large families of multi-component intermetallic semiconductors.
The thermoelectric properties of 54 different group 4 half-Heusler (HH) alloys have been studied from first principles. Electronic transport was studied with density functional theory using hybrid functionals facilitated by the $mathbf{k} cdot mathbf{p}$ method, while the temperature dependent effective potential method was used for the phonon contributions to the figure of merit $ZT$. The phonon thermal conductivity was calculated including anharmonic phonon-phonon, isotope, alloy and grain-boundary scattering. HH alloys have an ${it XYZ}$ composition and those studied here are in the group 4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14 (Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb). The electronic part of the thermal conductivity was found to significantly impact $ZT$ and thus the optimal doping level. Furthermore, the choice of functional was found to significantly affect thermoelectric properties, particularly for structures exhibiting band alignment features. The intrinsic thermal conductivity was significantly reduced when alloy and grain boundary scattering were accounted for, which also reduced the spread in thermal conductivity. It was found that sub-lattice disorder on the ${it Z}$-site, i.e. the site occupied by group 14 or 15 elements, was more effective than ${it X}$-site substitution, occupied by group 4 elements. The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBi based alloys display promising thermoelectric properties. A few other n-type and p-type compounds were also predicted to be potentially excellent thermoelectric materials, given that sufficiently high charge carrier concentrations can be achieved. This study provides insight into the thermoelectric potential of HH alloys and casts light on strategies to optimize thermoelectric performance of multicomponent alloys.
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