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Register a new userHalf-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi
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In this paper, we investigate the half-metallicity of Heusler alloys Fe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistance measurements. It is found that, with the increase of Cr content x, the Fermi level of Fe2Co1-xCrxSi moves from the top of valence band to the bottom of conduction band, and a large half-metallic band gap of 0.75 eV is obtained for x=0.75. We then successfully synthesized a series Heusler Fe2Co1-xCrxSi polycrystalline ribbon samples. The results of X-ray diffraction indicate that the Fe2Co1-xCrxSi series of samples are pure phase with a high degree of order and the saturation magnetic moment follows half-metallic Slater-Pauling rule. Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropic magnetoresistance of Fe2Co1-xCrxSi (x=0.25, 0.5, 0.75) show a negative value suggesting they are stable half-metallic ferromagnets.
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We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann transport equation with constant relaxation time approximation, validated by NiTiSn. The chosen half-Heuslers are found to be an indirect band gap semiconductor, and the lattice thermal conductivity is comparable with the state-of-the-art thermoelectric materials. The estimated power factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectric performance can be enhanced by appropriate doping rate. The value of ZT found for NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%.
Li-based half-Heusler alloys have attracted much attention due to their potential applications in optoelectronics and because they carry the possibility of exhibiting large magnetic moments for spintronic applications. Due to their similarities to metastable zinc blende half-metals, the half-Heusler alloys $beta$-LiMnZ (Z = N, P and Si) were systematically examined for their electric, magnetic and stability properties at optimized lattice constants and strained lattice constants that exhibit half-metallic properties. Other phases of the half-Heusler structure ($alpha$ and $gamma$) are also reported here, but they are unlikely to be grown. The magnetic moments of these stable Li-based alloys are expected to reach as high as 4 $mu_{mathrm{B}}$ per unit cell when Z = Si and 5 $mu_{mathrm{B}}$ per unit cell when Z = N and P, however the antiferromagnetic spin configuration is energetically favored when Z is a pnictogen. $beta$-LiMnSi at a lattice constant 14% larger than its equilibrium lattice constant is a promising half-metal for spintronic applications due to its large magnetic moment and vibrational stability. The modified Slater--Pauling rule for these alloys is determined. Finally, a plausible method for developing half-metallic Li$_x$MnZ at equilibrium, by tuning $x$, is investigated, but, unlike tetragonalization, this type of alloying introduces local structural changes that destroy the half-metallicity.
Half-Heusler (HH) phases (space group F43m, Clb) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability, scalability, and environmental benignity as well as efficient power output. Until recently, the verifiable dimensionless figure of merit (ZT) of HH phases has remained moderate near 1, which limits the power conversion efficiency of these materials. We report herein ZT~1.3 in n-type (Hf,Zr)NiSn alloys near 850 K developed through elemental substitution and simultaneously embedment of nanoparticles in the HH matrix, obtained by annealing the samples close to their melting temperatures. Introduction of mass fluctuation and scattering centers play a key role in the high ZT measured, as shown by the reduction of thermal conductivity and increase of thermopower. Based on computation, the power conversion efficiency of a n-p couple module based on the new n-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recently reported high-ZT p-type HH phases is expected to reach 13%, comparable to that of state-of-the-art materials, but with the mentioned additional materials and environmental attributes. Since the high efficiency is obtained without tuning the microstructure of the Half-Heusler phases, it leaves room for further optimization.
The thermoelectric properties of 54 different group 4 half-Heusler (HH) alloys have been studied from first principles. Electronic transport was studied with density functional theory using hybrid functionals facilitated by the $mathbf{k} cdot mathbf{p}$ method, while the temperature dependent effective potential method was used for the phonon contributions to the figure of merit $ZT$. The phonon thermal conductivity was calculated including anharmonic phonon-phonon, isotope, alloy and grain-boundary scattering. HH alloys have an ${it XYZ}$ composition and those studied here are in the group 4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14 (Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb). The electronic part of the thermal conductivity was found to significantly impact $ZT$ and thus the optimal doping level. Furthermore, the choice of functional was found to significantly affect thermoelectric properties, particularly for structures exhibiting band alignment features. The intrinsic thermal conductivity was significantly reduced when alloy and grain boundary scattering were accounted for, which also reduced the spread in thermal conductivity. It was found that sub-lattice disorder on the ${it Z}$-site, i.e. the site occupied by group 14 or 15 elements, was more effective than ${it X}$-site substitution, occupied by group 4 elements. The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBi based alloys display promising thermoelectric properties. A few other n-type and p-type compounds were also predicted to be potentially excellent thermoelectric materials, given that sufficiently high charge carrier concentrations can be achieved. This study provides insight into the thermoelectric potential of HH alloys and casts light on strategies to optimize thermoelectric performance of multicomponent alloys.
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