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Register a new userSpin and Charge Transport of Multi-Orbital Quantum Spin Hall Insulators
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The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to analyse the rich phenomenology that arises from the interplay between topology, disorder, valley and spin degrees of freedom. For this purpose, we consider a minimal multi-orbital real-space tight-binding hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potential and Rashba spin-orbit coupling.
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We study the effect of electron-electron interactions on the charge and spin structures of a Quantum Hall strip in a triangularly confined potential. We find that the strip undergoes a spin-unpolarized to spin-polarized transition as a function of magnetic field perpendicular to the strip. For sharp confinements the spin-polarization transition is spontaneous and first develops at the softer side of the triangular potential which shows up as an eye-structure in the electron dispersion. For sufficiently weak confinements this spin-polarization transition is preceded by a charge reconstruction of a single spin species, which creates a spin-polarized strip of electrons with a width of the order of the magnetic length detached from the rest of the system. Relevance of our findings to the recent momentum resolved tunneling experiments is also discussed.
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