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Register a new userSurface Step Defect in 3D Topological Insulators: Electric Manipulation of Spin and Quantum Spin Hall Effect
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We study the influence of step defect on surface states in three-dimensional topological insulators subject to a perpendicular magnetic field. By calculating the energy spectrum of the surface states, we find that Landau levels (LLs) can form on flat regions of the surface and are distant from the step defect, and several subbands emerge at side surface of the step defect. The subband which connects to the two zeroth LLs is spin-polarized and chiral. In particular, when the electron transports along the side surface, the electron spin direction can be manipulated arbitrarily by gate voltage. And no reflection occurs even if the electron spin direction is changed. This provides a fascinating avenue to control the electron spin easily and coherently. In addition, regarding the subbands with high LL index, there exist spin-momentum locking helical states and the quantum spin Hall effect can appear.
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We investigate interaction effects in three dimensional weak topological insulators (TI) with an even number of Dirac cones on the surface. We find that the surface states can be gapped by a surface charge density wave (CDW) order without breaking the time-reversal symmetry. In this sense, time reversal symmetry alone can not robustly protect the weak TI state in the presence of interactions. If the translational symmetry is additionally imposed in the bulk, a topologically non-trivial weak TI state can be obtained with helical edge states on the CDW domain walls. In other words, a CDW domain wall on the surface is topologically equivalent to the edge of a two-dimensional quantum spin Hall insulator. Therefore, the surface state of a weak topological insulator with translation symmetry breaking on the surface has a half quantum spin Hall effect, in the same way that the surface state of a strong topological insulator with time-reversal symmetry breaking on the surface has a half quantum Hall effect. The on-site and nearest neighbor interactions are investigated in the mean field level and the phase diagram for the surface states of weak topological insulators is obtained.
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.
The interplay between non-Hermiticity and topology opens an exciting avenue for engineering novel topological matter with unprecedented properties. While previous studies have mainly focused on one-dimensional systems or Chern insulators, here we investigate topological phase transitions to/from quantum spin Hall (QSH) insulators driven by non-Hermiticity. We show that a trivial to QSH insulator phase transition can be induced by solely varying non-Hermitian terms, and there exists exceptional edge arcs in QSH phases. We establish two topological invariants for characterizing the non-Hermitian phase transitions: i) with time-reversal symmetry, the biorthogonal $mathbb{Z}_2$ invariant based on non-Hermitian Wilson loops, and ii) without time-reversal symmetry, a biorthogonal spin Chern number through biorthogonal decompositions of the Bloch bundle of the occupied bands. These topological invariants can be applied to a wide class of non-Hermitian topological phases beyond Chern classes, and provides a powerful tool for exploring novel non-Hermitian topological matter and their device applications.
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper we review our recent results on spin accumulation in ballistic two-dimensional semiconductor heterostructures with Rashba/Dresselhaus spin orbit interactions, and extend the method developed previously to predict the existince of spin-Hall effect on the surface of three-dimensional topological insulators. The major difference of the new Spin-Hall effect is its magnitude, which is predicted to be much stronger than in semiconductor heterostructures. This happens because in semiconductors the spin accumulation appears due to a small spin-orbit interaction, while the spin-orbit constitutes a leading term in the Hamiltonian of topological insulator.
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