Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userFractional charge oscillations in quantum spin Hall quantum dots
71
0
0.0
(
0
)
Added by
Niccolo Traverso Ziani
Publication date
2016
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
We show that correlated two-particle backscattering can induce fractional charge oscillations in a quantum dot built at the edge of a two-dimensional topological insulator by means of magnetic barriers. The result nicely complements recent works where the fractional oscillations were obtained employing of semiclassical treatments. Moreover, since by rotating the magnetization of the barriers a fractional charge can be trapped in the dot via the Jackiw-Rebbi mechanism, the system we analyze offers the opportunity to study the interplay between this noninteracting charge fractionalization and the fractionalization due to two-particle backscattering. In this context, we demonstrate that the number of fractional oscillations of the charge density depends on the magnetization angle. Finally, we address the renormalization induced by two-particle backscattering on the spin density, which is characterized by a dominant oscillation, sensitive to the Jackiw-Rebbi charge, with a wavelength twice as large as the charge density oscillations.
rate research
Read More
Quasiparticles with fractional charge and fractional statistics are key features of the fractional quantum Hall effect. We discuss in detail the definitions of fractional charge and statistics and the ways in which these properties may be observed. In addition to theoretical foundations, we review the present status of the experiments in the area. We also discuss the notions of non-Abelian statistics and attempts to find experimental evidence for the existence of non-Abelian quasiparticles in certain quantum Hall systems.
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were observed despite the proximity of the QDs layer to the 2DES. However, the magnetoresistance ($rho_{xx}$) and Hall resistance ($rho_{xy}$) are suppressed significantly in the magnetic field range of filling factor $ u<1$ when a positive voltage is applied to the front gate. The influence of the charge state in QDs was observed on the transport properties of the nearby 2DES only in the field range of $ u < 1$. It is proposed that the anomalous suppression of $rho_{xx}$ and $rho_{xy}$ is related to spin excitation, which is induced by spin-flip processes involving electrons in the QDs and the 2DES.
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.
We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.
We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor { u} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at { u} = 2/3 a tunneling charge of (2/3)e and a single charged edge.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
