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Direct measurement of the Seebeck coefficient in a Kondo-correlated single-quantum-dot transistor

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 Added by Clemens Winkelmann
 Publication date 2018
  fields Physics
and research's language is English




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We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental thermoelectric parameter is obtained by directly monitoring the magnitude of the voltage induced in response to a temperature difference across the junction, while keeping a zero net tunneling current through the device. In contrast to bulk materials and single molecules probed in a scanning tunneling microscopy (STM) configuration, investigating the thermopower in nanoscale electronic transistors benefits from the electric tunability to showcase prominent quantum effects. Here, striking sign changes of the Seebeck coefficient are induced by varying the temperature, depending on the spin configuration in the quantum dot. The comparison with Numerical Renormalization Group (NRG) calculations demonstrate that the tunneling density of states is generically asymmetric around the Fermi level in the leads, both in the cotunneling and Kondo regimes.

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72 - R. Scheibner 2004
The thermopower of a Kondo-correlated gate-defined quantum dot is studied using a current heating technique. In the presence of spin correlations the thermopower shows a clear deviation from the semiclassical Mott relation between thermopower and conductivity. The strong thermopower signal indicates a significant asymmetry in the spectral density of states of the Kondo resonance with respect to the Fermi energies of the reservoirs. The observed behavior can be explained within the framework of an Anderson-impurity model. Keywords: Thermoelectric and thermomagnetic effects, Coulomb blockade, single electron tunneling, Kondo-effect PACS Numbers: 72.20.Pa, 73.23.Hk
We investigate Kondo effect and spin blockade observed on a many-electron quantum dot and study the magnetic field dependence. At lower fields a pronounced Kondo effect is found which is replaced by spin blockade at higher fields. In an intermediate regime both effects are visible. We make use of this combined effect to gain information about the internal spin configuration of our quantum dot. We find that the data cannot be explained assuming regular filling of electronic orbitals. Instead spin polarized filling seems to be probable.
Universal properties of entangled many-body states are controlled by their symmetry and quantum fluctuations. By magnetic-field tuning of the spin-orbital degeneracy in a Kondo-correlated quantum dot, we have modified quantum fluctuations to directly measure their influence on the many-body properties along the crossover from $SU(4)$ to $SU(2)$ symmetry of the ground state. High-sensitive current noise measurements combined with the non-equilibrium Fermi liquid theory clarify that the Kondo resonance and electron correlations are enhanced as the fluctuations, measured by the Wilson ratio, increase along the symmetry crossover. Our achievement demonstrates that non-linear noise constitutes a measure of quantum fluctuations that can be used to tackle quantum phase transitions.
The current emission noise of a carbon nanotube quantum dot in the Kondo regime is measured at frequencies $ u$ of the order or higher than the frequency associated with the Kondo effect $k_B T_K/h$, with $T_K$ the Kondo temperature. The carbon nanotube is coupled via an on-chip resonant circuit to a quantum noise detector, a superconductor-insulator-superconductor junction. We find for $h u approx k_B T_K$ a Kondo effect related singularity at a voltage bias $eV approx h u $, and a strong reduction of this singularity for $h u approx 3 k_B T_K$, in good agreement with theory. Our experiment constitutes a new original tool for the investigation of the non-equilibrium dynamics of many-body phenomena in nanoscale devices.
We have used the electromigration technique to fabricate a $rm{C_{{60}}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.
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