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Register a new userLiquid Epitaxial Growth of Two-dimensional Non-layer structured hybrid Perovskite
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The hybrid perovskite CH3NH3PbX3 (X= Cl, Br, I) is a promising material for developing novel optoelectronic devices. Owing to the intrinsic non-layer structure, it remains challenging to synthesize molecularly thin CH3NH3PbX3 with large size. Here, we report a low-cost and highly efficient fabrication route to obtain large-scale single-crystalline 2D CH3NH3PbX3 perovskites on a mica substrate via liquid epitaxy. The 2D perovskite is characterized as 8 nm in thickness and hundreds of micrometers in lateral size. First-principles calculations suggest the strong potassium-halogen interactions at the perovskite/mica interface lower the interface energy of perovskites, driving their fast in-plane growth. Spectroscopic investigations reveal 2D CH3NH3PbBr3 possess small exciton binding energy of 30 meV, allowing a superior visible-light photodetector with a photoresponsivity of 126 A/W and a bandwidth exceeded 80 kHz. These features demonstrate that liquid epitaxy is a bottom-up approach to fabricate the non-layer structured 2D perovskites, which offer a new material platform for the device applications and fundamental investigations.
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Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.
Quantum spin Hall insulators have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, the clean and atomically sharp ES serving as ideal 1D conducting channels are still lack. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observations of the topological ES at the step edge by scanning tunneling microscopy and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits remarkable robustness against non time reversal symmetry perturbations. The theoretical simulations verify the topological non-trivial character of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, paving the way to engineer the novel topological features by using the nanoribbons as the 1D building block.
Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles.
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications.
The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moire pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.
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