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Register a new userEpitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States
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Quantum spin Hall insulators have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, the clean and atomically sharp ES serving as ideal 1D conducting channels are still lack. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observations of the topological ES at the step edge by scanning tunneling microscopy and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits remarkable robustness against non time reversal symmetry perturbations. The theoretical simulations verify the topological non-trivial character of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, paving the way to engineer the novel topological features by using the nanoribbons as the 1D building block.
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The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either strong or weak, and experimental confirmations of the strong topological insulator (STI) rapidly followed the theoretical predictions. In contrast, the weak topological insulator has so far eluded experimental verification, since the topological surface states emerge only on particular side surfaces which are typically undetectable in real 3D crystals. Here we provide experimental evidence for the WTI state in a bismuth iodide, $beta$-Bi4I4. Significantly, the crystal has naturally cleavable top and side planes both stacked via van-der-Waals forces, which have long been desirable for the experimental realization of the WTI state. As a definitive signature of it, we find quasi-1D Dirac TSS at the side-surface (100) while the top-surface (001) is topologically dark. Furthermore, a crystal transition from the $beta$- to $alpha$-phase drives a topological phase transition from a nontrivial WTI to the trivial insulator around room temperature. This topological phase, viewed as quantum spin Hall (QSH) insulators stacked three-dimensionally, and excellent functionality with on/off switching will lay a foundation for new technology benefiting from highly directional spin-currents with large density protected against backscattering.
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $beta$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $beta$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
We report the synthesis and systematic studies of a new layered ternary telluride TaPdTe5 with quasi-one-dimensional PdTe2 chains. This compound crystalizes in a layered orthorhombic structure with space group Cmcm. Analysis of its curved field-dependent Hall resistivity, using the two-band model, indicates the hole-dominated transport with a high mobility ${mu}_h$ = 2.38 $times$ 10$^3$ cm$^2$ V$^{-1}$ s$^{-1}$ at low temperatures. The in-plane magnetoresistance (MR) displays significant anisotropy with field applied along the crystallographic $b$ axis. The MR with the current applied along the $c$-axis is also measured in high magnetic fields up to 51.7 T. Remarkably, it follows a power-law dependence and reaches (9.5 $times$ 10$^3$)% at 2.1 K without any signature of saturation. The De Haas-van Alphen oscillations show a small Fermi-surface pocket with a nontrivial Berry phase. The Shubnikov-de Haas (SdH) oscillations are detected at low temperatures and under magnetic fields above 28.5 T. Two effective masses $m^*$ (0.26$m_e$ and 0.41$m_e$) are extracted from the oscillatory SdH data. Our first-principles calculations unveil a topological Dirac cone in its surface states, and, in particular, the topological index indicates that TaPdTe$_5$ is a topologically nontrivial material.
The hybrid perovskite CH3NH3PbX3 (X= Cl, Br, I) is a promising material for developing novel optoelectronic devices. Owing to the intrinsic non-layer structure, it remains challenging to synthesize molecularly thin CH3NH3PbX3 with large size. Here, we report a low-cost and highly efficient fabrication route to obtain large-scale single-crystalline 2D CH3NH3PbX3 perovskites on a mica substrate via liquid epitaxy. The 2D perovskite is characterized as 8 nm in thickness and hundreds of micrometers in lateral size. First-principles calculations suggest the strong potassium-halogen interactions at the perovskite/mica interface lower the interface energy of perovskites, driving their fast in-plane growth. Spectroscopic investigations reveal 2D CH3NH3PbBr3 possess small exciton binding energy of 30 meV, allowing a superior visible-light photodetector with a photoresponsivity of 126 A/W and a bandwidth exceeded 80 kHz. These features demonstrate that liquid epitaxy is a bottom-up approach to fabricate the non-layer structured 2D perovskites, which offer a new material platform for the device applications and fundamental investigations.
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