No Arabic abstract
Structural and superconducting properties of high quality Niobium nanofilms with different thicknesses are investigated on silicon oxide and sapphire substrates. The role played by the different substrates and the superconducting properties of the Nb films are discussed based on the defectivity of the films and on the presence of an interfacial oxide layer between the Nb film and the substrate. The X-ray absorption spectroscopy is employed to uncover the structure of the interfacial layer. We show that this interfacial layer leads to a strong proximity effect, specially in films deposited on a SiO$_2$ substrate, altering the superconducting properties of the Nb films. Our results establish that the critical temperature is determined by an interplay between quantum-size effects, due to the reduction of the Nb film thicknesses, and proximity effects.
The proximity effect (PE) between superconductor and confined electrons can induce the effective pairing phenomena of electrons in nanowire or quantum dot (QD). Through interpreting the PE as an exchange of virtually quasi-excitation in a largely gapped superconductor, we found that there exists another induced dynamic process. Unlike the effective pairing that mixes the QD electron states coherently, this extra process leads to dephasing of the QD. In a case study, the dephasing time is inversely proportional to the Coulomb interaction strength between two electrons in the QD. Further theoretical investigations imply that this dephasing effect can decrease the quality of the zero temperature mesoscopic electron transportation measurements by lowering and broadening the corresponding differential conductance peaks.
Coupling a normal metal wire to a superconductor induces an excitation gap in the normal metal. In the absence of disorder, the induced excitation gap is strongly suppressed by finite-size effects if the thickness of the superconductor is much smaller than the thickness of the normal metal and the superconducting coherence length. We show that the presence of disorder, either in the bulk or at the exposed surface of the superconductor, significantly enhances the magnitude of the induced gap, such that it approaches the superconducting gap in the limit of strong disorder. We also discuss the shift of energy bands inside the normal-metal wire as a result of the coupling to the superconducting shell.
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their electrotransport and electromechanical performances can be lifted up from mostly empirical to prognostic theoretical level.Recently we have shown that alternating piezoelectric displacement of the ferroelectric domain surfaces can lead to the alternate stretching and separation of graphene areas at the steps between elongated and contracted domains, and the conductance of graphene channel can be increased essentially at room temperature, because electrons in the stretched section scatter on acoustic phonons.The piezoelectric mechanism of graphene conductance control requires systematic studies of the ambient condition impact on its manifestations. This theoretical work studies in details the temperature behavior of the graphene conductance changes induced by piezoelectric effect in a ferroelectric substrate with domain stripes.We revealed the possibility to control graphene conductance (that can change up to 100 times for PZT ferroelectric substrate) by tuning the ambient temperature from low values to the critical one for given gate voltage and channel length.Also we demonstrate the possibility to control graphene conductance changes up to one hundred of times by tuning the gate voltage from 0 to the critical value at a given temperature and channel length. Obtained results can be open the way towards graphene on ferroelectric applications in piezoresistive memories operating in a wide temperature range.
Superconducting and normal state properties of sputtered Niobium nanofilms have been systematically investigated, as a function of film thickness in a d=9-90 nm range, on different substrates. The width of the superconducting-to-normal transition for all films remained in few tens of mK, thus remarkably narrow, confirming their high quality. We found that the superconducting critical current density exhibits a pronounced maximum, three times larger than its bulk value, for film thickness around 25 nm, marking the 3D-to-2D crossover. The extracted magnetic penetration depth shows a sizeable enhancement for the thinnest films, aside the usual demagnetization effects. Additional amplification effects of the superconducting properties have been obtained in the case of sapphire substrates or squeezing the lateral size of the nanofilms. For thickness close to 20 nm we also measured a doubled perpendicular critical magnetic field compared to its saturation value for d>33 nm, indicating shortening of the correlation length and the formation of small Cooper pairs in the condensate. Our data analysis evidences an exciting interplay between quantum-size and proximity effects together with strong-coupling effects and importance of disorder in the thinnest films, locating the ones with optimally enhanced critical properties close to the BCS-BEC crossover regime.
We propose a way of making graphene superconductive by putting on it small superconductive islands which cover a tiny fraction of graphene area. We show that the critical temperature, T_c, can reach several Kelvins at the experimentally accessible range of parameters. At low temperatures, T<<T_c, and zero magnetic field, the density of states is characterized by a small gap E_g<T_c resulting from the collective proximity effect. Transverse magnetic field H_g(T) E_g is expected to destroy the spectral gap driving graphene layer to a kind of a superconductive glass state. Melting of the glass state into a metal occurs at a higher field H_{g2}(T).