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Register a new userThermal properties of NbN single-photon detectors
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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We have found experimentally that the rise times of voltage pulses in NbN superconducting single photon detectors increase nonlinearly with increasing detector length. We fabricated superconducting single photon detectors based on NbN thin films with a meander-like sensitive region of area from 2x2um2 to 11x11um2. The effect is connected with the dependence of the detector resistance, which appears after photon absorption, on its kinetic inductance and hence on detector length. This conclusion is confirmed by our calculations in the framework of the two-temperature model.
We measure the maximal distance at which two absorbed photons can jointly trigger a detection event in NbN nanowire superconducting single photon detector (SSPD) microbridges by comparing the one-photon and two-photon efficiency of bridges of different overall lengths, from 0 to 400 nm. We find a length of $23 pm 2$ nm. This value is in good agreement with to size of the quasiparticle cloud at the time of the detection event.
We systematically investigated the physical properties of amorphous Mo$_{rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{rm x}$ Si$_{1-x}$ films increases gradually with the stoichiometry x, and the highest $T_C$=7.9 K was found in Mo$_{rm 0.83}$ Si$_{0.17}$. Beyond $x$=0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo$_{rm 0.83}$ Si$_{0.17}$ show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo$_{rm 0.83}$ Si$_{0.17}$ films, however, reveal robust superconductivity even with thickness d$leq$1 nm. We also characterized wide microwires based on the 2 nm thin Mo$_{rm 0.8}$ Si$_{0.2}$ films with widths 40 and 60 $mu$m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer, demonstrate a higher critical temperature, critical current density and lower residual resistivity in comparison to films deposited onto bare substrates. Unfortunately, the thermal coupling of the NbN film to the substrate weakens. SNSPDs made of 4.9 nm thick NbN films on buffered substrates (in comparison to detectors made from NbN films on bare GaAs) demonstrate three orders of magnitude lower dark count rates and about ten times higher detection efficiency at 900 nm being measured at 90% of the critical current. The system timing jitter of SNSPDs on buffered substrates is 72 ps which is 36 ps lower than those on bare substrate. However, a weaker thermal coupling of NbN nanowire to the buffered substrate leads to a latching effect at bias currents > 0.97 IC.
We report measurements of the energy resolution of ultra-sensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 terahertz, near the predicted value due to intrinsic thermal fluctuation noise.
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