Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPhysical properties of amorphous molybdenum silicide films for single photon detectors
101
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We systematically investigated the physical properties of amorphous Mo$_{rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{rm x}$ Si$_{1-x}$ films increases gradually with the stoichiometry x, and the highest $T_C$=7.9 K was found in Mo$_{rm 0.83}$ Si$_{0.17}$. Beyond $x$=0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo$_{rm 0.83}$ Si$_{0.17}$ show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo$_{rm 0.83}$ Si$_{0.17}$ films, however, reveal robust superconductivity even with thickness d$leq$1 nm. We also characterized wide microwires based on the 2 nm thin Mo$_{rm 0.8}$ Si$_{0.2}$ films with widths 40 and 60 $mu$m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength
rate research
Read More
Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured to reveal the charge transport mechanism, which is of great importance for applications but is still insufficient. It is found that Mott variable hopping conductivity dominates the transport of sputtered amorphous molybdenum silicide thin films. Additionally, the observed magneto-resistance crossover from negative to positive is ascribed to the interference enhancement and the shrinkage of electron wave function, both of which vary the probability of hopping between localized sites.
Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) has delivered excellent performances, and has had a great impact on a range of research fields. The timing jitter, which denotes the temporal resolution of the detection, is a crucial parameter for many applications. Despite extensive work since their apparition, the lowest jitter achievable with SNSPDs is still not clear, and the origin of the intrinsic limits is not fully understood. Understanding its intrinsic behaviour and limits is a mandatory step toward improvements. Here, we report our experimental study on the intrinsically-limited timing jitter in molybdenum silicide (MoSi) SNSPDs. We show that to reach intrinsic jitter, several detector properties such as the latching current and the kinetic inductance of the devices have to be understood. The dependence on the nanowire cross-section and the energy dependence of the intrinsic jitter are exhibited, and the origin of the limits are explicited. System timing jitter of 6.0 ps at 532 nm and 10.6 ps at 1550 nm photon wavelength have been obtained.
We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects.
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
Superconducting properties of three series of amorphous WxSi1-x films with different thickness and stoichiometry were investigated by dc transport measurements in a magnetic field up to 9 T. These amorphous WxSi1-x films were deposited by magnetron co-sputtering of the elemental source targets onto silicon substrates at room temperature and patterned in form of bridges by optical lithography and reactive ion etching. Analysis of the data on magnetoconductivity allowed us to extract the critical temperature, superconducting coherence length, magnetic penetration depth, and diffusion coefficient of electrons in the normal state as a function of film thickness for each stoichiometry. Two basic time constants were derived from transport and time-resolving measurements. A dynamic process of the formation of a hot-spot was analyzed in the framework of a diffusion-based vortex-entry model. We used the two stage diffusion approach and defined a hotspot size by assuming that the quasi-particles and normal-state electrons have the equal diffusion constant. Our findings are consistent with the most recent results on a hot-spot relaxation time in the WxSi1-x superconducting nanowire single-photon detector. In the 5 nm thick W0.85Si0.15 film the hot-spot has a diameter of 105 nm at the peak of the number of non-equilibrium quasi-particles.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
