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Register a new userProbing the Hotspot Interaction Length in NbN Nanowire Superconducting Single-Photon Detectors
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We measure the maximal distance at which two absorbed photons can jointly trigger a detection event in NbN nanowire superconducting single photon detector (SSPD) microbridges by comparing the one-photon and two-photon efficiency of bridges of different overall lengths, from 0 to 400 nm. We find a length of $23 pm 2$ nm. This value is in good agreement with to size of the quasiparticle cloud at the time of the detection event.
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We develop single-photon detectors comprising single-mode fiber-coupled superconducting nanowires, with high system detection efficiencies at a wavelength of 940 nm. The detector comprises a 6.5-nm-thick, 110-nm-wide NbN nanowire meander fabricated onto a Si substrate with a distributed Bragg reflector for enhancing the optical absorptance. We demonstrate that, via the design of a low filling factor (1/3) and active area ({Phi} = 10 {mu}m), the system reaches a detection efficiency of ~60% with a dark count rate of 10 Hz, a recovery time <12 ns, and a timing jitter of ~50 ps.
The fast development of superconducting nanowire single photon detector (SNSPD) in the past decade has enabled many advances in quantum information technology. The best system detection efficiency (SDE) record at 1550 nm wavelength was 93% obtained from SNSPD made of amorphous WSi which usually operated at sub-kelvin temperatures. We first demonstrate SNSPD made of polycrystalline NbN with SDE of 90.2% for 1550 nm wavelength at 2.1K, accessible with a compact cryocooler. The SDE saturated to 92.1% when the temperature was lowered to 1.8K. The results lighten the practical and high performance SNSPD to quantum information and other high-end applications.
We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect, and a simple model which quantitatively explains the results.
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer, demonstrate a higher critical temperature, critical current density and lower residual resistivity in comparison to films deposited onto bare substrates. Unfortunately, the thermal coupling of the NbN film to the substrate weakens. SNSPDs made of 4.9 nm thick NbN films on buffered substrates (in comparison to detectors made from NbN films on bare GaAs) demonstrate three orders of magnitude lower dark count rates and about ten times higher detection efficiency at 900 nm being measured at 90% of the critical current. The system timing jitter of SNSPDs on buffered substrates is 72 ps which is 36 ps lower than those on bare substrate. However, a weaker thermal coupling of NbN nanowire to the buffered substrate leads to a latching effect at bias currents > 0.97 IC.
We investigate the operation of WSi superconducting nanowire single-photon detectors (SNSPDs) at 2.5 K, a temperature which is ~ 70 % of the superconducting transition temperature (TC) of 3.4 K. We demonstrate saturation of the system detection efficiency at 78 +- 2 % with a jitter of 191 ps. We find that the jitter at 2.5 K is limited by the noise of the readout, and can be improved through the use of cryogenic amplifiers. Operation of SNSPDs with high efficiency at temperatures very close to TC appears to be a unique property of amorphous WSi.
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