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Register a new userSuperconducting proximity effect in epitaxial Al-InAs heterostructures
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Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits. Recently Josephson junctions using InAs weak link with epitaxial aluminum contact have improved the product of normal resistance and critical current, $I_cR_N$, in addition to fabrication process reliability. Here we study similar devices with epitaxial contact and find large supercurrent and substantial product of $I_cR_N$ in our junctions. However we find a striking difference when we compare these samples with higher mobility samples in terms of product of excess current and normal resistance, $I_{ex}R_N$. The excess current is negligible in lower mobility devices while it is substantial and independent of gate voltage and junction length in high mobility samples. This indicates that even though both sample types have epitaxial contacts only the high-mobility one has a high transparency interface. In the high mobility short junctions, we observe values of $I_cR_N/Delta sim 2.2$ and $I_{ex}R_N/Delta sim 1.5$ in semiconductor weak links.
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We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = SI{270}{micro V}$, and excess current, $I_{ex}R_{N} = SI{200}{micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.
Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.
Majarona fermions (MFs) were predicted more than seven decades ago but are yet to be identified [1]. Recently, much attention has been paid to search for MFs in condensed matter systems [2-10]. One of the seaching schemes is to create MF at the interface between an s-wave superconductor (SC) and a 3D topological insulator (TI) [11-13]. Experimentally, progresses have been achieved in the observations of a proximity-effect-induced supercurrent [14-16], a perfect Andreev reflection [17] and a conductance peak at the Fermi level [18]. However, further characterizations are still needed to clarify the nature of the SC-TI interface. In this Letter, we report on a strong proximity effect in Pb-Bi2Te3 hybrid structures, based on which Josephson junctions and superconducting quantum interference devices (SQUIDs) can be constructed. Josephson devices of this type would provide a test-bed for exploring novel phenomena such as MFs in the future.
Conventional spin-singlet superconductivity that deeply penetrates into ferromagnets is typically killed by the exchange interaction, which destroys the spin-singlet pairs. Under certain circumstances, however, superconductivity survives this interaction by adopting the pairing behavior of spin triplets. The necessary conditions for the emergence of triplet pairs are well-understood, owing to significant developments in theoretical frameworks and experiments. The long-term challenges to inducing superconductivity in magnetic semiconductors, however, involve difficulties in observing the finite supercurrent, even though the generation of superconductivity in host materials has been well-established and extensively examined. Here, we show the first evidence of proximity-induced superconductivity in a ferromagnetic semiconductor (In, Fe)As. The supercurrent reached a distance scale of $sim 1~mu$m, which is comparable to the proximity range in two-dimensional electrons at surfaces of pure InAs. Given the long range of its proximity effects and its response to magnetic fields, we conclude that spin-triplet pairing is dominant in proximity superconductivity. Therefore, this progress in ferromagnetic semiconductors is a breakthrough in semiconductor physics involving unconventional superconducting pairing.
Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect through non-local measurements. Zeeman splitting field estimation demonstrates a significant magnetic proximity exchange field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R_(XX,D)with increasing magnetic field at { u} = 0 may attribute to the MPE induced new ground state phases. This MPE revealed in our CrBr3/graphene van der Waals heterostructures therefore provides a solid physics basis and key functionality for next generation 2D spin logic and memory devices.
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