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Register a new userSuspended silicon nitride thin films with enhanced and electrically tunable reflectivity
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We report on the realization of silicon nitride membranes with enhanced and electrically tunable reflectivity. A subwavelength one-dimensional grating is directly patterned on a suspended 200 nm-thick, high stress commercial film using electron beam lithography. A Fano resonance is observed in the transmission spectrum of TM polarized light impinging on the membrane at normal incidence, leading to an increase in its reflectivity from 10% to 78% at 937 nm. The observed spectrum is compared to the results of rigorous coupled wave analysis simulations based on measurements of the grating transverse profile through localized cuts of the suspended film with a Focused Ion Beam. By mounting the membrane chip on a ring piezoelectric transducer and applying a compressive force to the substrate we subsequently observe a shift of the transmission spectrum by 0.23 nm.
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The profile of suspended silicon nitride thin films patterned with one-dimensional subwavelength grating structures is investigated using Atomic Force Microscopy. We first show that the results of the profilometry can be used as input to Rigorous Coupled Wave Analysis simulations to predict the transmission spectrum of the gratings under illumination by monochromatic light at normal incidence and compare the results of the simulations with experiments. Secondly, we observe sharp vertical deflections of the films at the boundaries of the patterned area due to local modifications of the tensile stress during the patterning process. These deflections are experimentally observed for various grating structures and investigated on the basis of a simple analytical model as well as finite element method simulations.
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We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.
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