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Register a new userTunable plasmons in large area WTe2 thin films
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The observation of the electrically tunable and highly confined plasmons in graphene has stimulated the exploration of interesting properties of plasmons in other two dimensional materials. Recently, hyperbolic plasmon resonance modes are observed in exfoliated WTe2 films, a type-II Weyl semimetal with layered structure, providing a platform for the assembly of plasmons with hyperbolicity and exotic topological properties. However, the plasmon modes were observed in relatively thick and small-area films, which restrict the tunability and application for plasmons. Here, large-area (~ cm) WTe2 films with different thickness are grown by chemical vapor deposition method, in which plasmon resonance modes are observed in films with different thickness down to about 8 nm. Hybridization of plasmon and surface polar phonons of the substrate is revealed by mapping the plasmon dispersion. The plasmon frequency is demonstrated to be tunable by changing the temperature and film thickness. Our results facilitate the development of a tunable and scalable WTe2 plasmonic system for revealing topological properties and towards various applications in sensing, imaging and light modulation.
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The ability to modulate light at high speeds is of paramount importance for telecommunications, information processing, and medical imaging technologies. This has stimulated intense efforts to master optoelectronic switching at visible and near-infrared frequencies, although coping with current computer speeds in integrated architectures still remains a major challenge. As a partial success, midinfrared light modulation has been recently achieved through gating patterned graphene. Here we show that atomically thin noble metal nanoislands can extend optical modulation to the visible and near-infrared spectral range. We find plasmons in thin metal nanodisks to produce similar absorption cross-sections as spherical particles of the same diameter. Using realistic levels of electrical doping, plasmons are shifted by about half their width, thus leading to a factor-of-two change in light absorption. These results, which we substantiate on microscopic quantum theory of the optical response, hold great potential for the development of electrical visible and near-infrared light modulation in integrable, nanoscale devices.
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We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within the bulk valence band, the temperature dependence reveals a clear signature of generation-recombination noise in the defect states in the bulk band gap. However, when the Fermi energy is tuned to the bulk band gap, the gate voltage dependence of noise shows that the resistance fluctuations in surface transport are caused by correlated mobility-number density fluctuations due to the activated defect states present in the bulk of the topological insulator crystal with a density of D$_{it}=3.2times10^{17}$ cm$^2$eV$^{-1}$. In the presence of a magnetic field, noise in these materials follows a parabolic dependence, which is qualitatively similar to mobility and charge-density fluctuation noise in non-degenerately doped trivial semiconductors. Our studies reveal that even in thin films of (Bi,Sb)$_2$Te$_3$ with thickness as low as 10 nm, the intrinsic bulk defects are the dominant source of noise.
Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets.
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (> cm^2), coupled bilayer graphene on SiO2/Si substrates. Stacking two graphene films leads to direct electronic interactions between layers, where the resulting film properties are determined by the local twist angle. Polycrystalline bilayer films have a stained-glass window appearance explained by the emergence of a narrow absorption band in the visible spectrum that depends on twist angle. Direct measurement of layer orientation via electron diffraction, together with Raman and optical spectroscopy, confirms the persistence of clean interfaces over large areas. Finally, we demonstrate that interlayer coupling can be reversibly turned off through chemical modification, enabling optical-based chemical detection schemes. Together, these results suggest that individual 2D crystals can be individually assembled to form electronically coupled systems suitable for large-scale applications.
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