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Register a new userInvestigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals
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The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the $I$-$V$ characteristics, $C$-$V$ characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.
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Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.
For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.
The goal of the textsc{Majorana} textsc{Demonstrator} project is to search for 0$ ubetabeta$ decay in $^{76}mathrm{Ge}$. Of all candidate isotopes for 0$ ubetabeta$, $^{76}mathrm{Ge}$ has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0$ ubetabeta$, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the textsc{Majorana} collaboration made with enriched germanium detectors manufactured by ORTEC$^{circledR}$. The process from production, to characterization and integration in textsc{Majorana} mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.
P-type point contact (PPC) germanium detectors are used in rare event and low-background searches, including neutrinoless double beta (0vbb) decay, low-energy nuclear recoils, and coherent elastic neutrino-nucleus scattering. The detectors feature an excellent energy resolution, low detection thresholds down to the sub-keV range, and enhanced background rejection capabilities. However, due to their large passivated surface, separating the signal readout contact from the bias voltage electrode, PPC detectors are susceptible to surface effects such as charge build-up. A profound understanding of their response to surface events is essential. In this work, the response of a PPC detector to alpha and beta particles hitting the passivated surface was investigated in a multi-purpose scanning test stand. It is shown that the passivated surface can accumulate charges resulting in a radial-dependent degradation of the observed event energy. In addition, it is demonstrated that the pulse shapes of surface alpha events show characteristic features which can be used to discriminate against these events.
The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.
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