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Register a new userCorrelating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
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Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of 100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.
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Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from growth defects in CVD diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional reconstruction of strained volumes; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results open a path towards directional detection of dark matter via X-ray measurement of crystal strain, and provide a new tool for diamond growth analysis and improvement of defect-based sensing.
Using a time-resolved detection scheme in scanning transmission X-ray microscopy (STXM) we measured element resolved ferromagnetic resonance (FMR) at microwave frequencies up to 10,GHz and a spatial resolution down to 20,nm at two different synchrotrons. We present different methods to separate the contribution of the background from the dynamic magnetic contrast based on the X-ray magnetic circular dichroism (XMCD) effect. The relative phase between the GHz microwave excitation and the X-ray pulses generated by the synchrotron, as well as the opening angle of the precession at FMR can be quantified. A detailed analysis for homogeneous and inhomogeneous magnetic excitations demonstrates that the dynamic contrast indeed behaves as the usual XMCD effect. The dynamic magnetic contrast in time-resolved STXM has the potential be a powerful tool to study the linear and non-linear magnetic excitations in magnetic micro- and nano-structures with unique spatial-temporal resolution in combination with element selectivity.
Scanning Thermal Microscopy (SThM) uses micromachined thermal sensors integrated in a force sensing cantilever with a nanoscale tip can be highly useful for exploration of thermal management of nanoscale semiconductor devices. As well as mapping of surface properties of related materials. Whereas SThM is capable to image externally generated heat with nanoscale resolution, its ability to map and measure thermal conductivity of materials has been mainly limited to polymers or similar materials possessing low thermal conductivity in the range from 0.1 to 1 W/mK, with lateral resolution on the order of 1 mum. In this paper we use linked experimental and theoretical approaches to analyse thermal performance and sensitivity of the micromachined SThM probes in order to expand their applicability to a broader range of nanostructures from polymers to semiconductors and metals. We develop physical models of interlinked thermal and electrical phenomena in these probes and then validate these models using experimental measurements of the real probes, which provided the basis for analysing SThM performance in exploration of nanostructures. Our study then highlights critical features of these probes, namely, the geometrical location of the thermal sensor with respect to the probe apex, thermal conductance of the probe to the support base, heat conduction to the surrounding gas, and the thermal conductivity of tip material adjacent to the apex. It is furthermore allows us to propose a novel design of the SThM probe that incorporates a carbon nanotube (CNT) or similar high thermal conductivity graphene sheet material positioned near the probe apex. The new sensor is predicted to provide spatial resolution to the thermal properties of nanostructures on the order of few tens of nm, as well as to expand the sensitivity of the SThM probe to materials with heat conductivity values up to 100-1000 W/mK.
We present here an overview of Coherent X-ray Diffraction Imaging (CXDI) with its application to nanostructures. This imaging approach has become especially important recently due to advent of X-ray Free-Electron Lasers (XFEL) and its applications to the fast developing technique of serial X-ray crystallography. We start with the basic description of coherent scattering on the finite size crystals. The difference between conventional crystallography applied to large samples and coherent scattering on the finite size samples is outlined. The formalism of coherent scattering from a finite size crystal with a strain field is considered. Partially coherent illumination of a crystalline sample is developed. Recent experimental examples demonstrating applications of CXDI to the study of crystalline structures on the nanoscale, including experiments at FELs, are also presented.
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
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