No Arabic abstract
We reveal that the origin of ferromagnetism caused by $sp$ electrons in graphene with vacancies can be traced to electrons partially filling $sp^{2*}$-antibonding and $p_z^*$-nonbonding states, which are induced by the vacancies and appear near the Fermi level. Because the spatial wavefunctions of the both states are composed of atomic orbitals in an antisymmetric configuration, their spin wavefunctions should be symmetric according to the electron exchange antisymmetric principle, leading to electrons partially filling these states in spin polarization. Since this $p_z^*$ state originates not from interactions between the atoms but from the unpaired $p_z$ orbitals due to the removal of $p_z$ orbitals on the minority sublattice, the $p_z^*$ state is constrained, distributed on the atoms of the majority sublattice, and decays gradually from the vacancy as $sim$ $1/r$. According to these characteristics, we concluded that the $p_z^*$ state plays a critical role in magnetic ordering in graphene with vacancies. If the vacancy concentration in graphene is large enough to cause the decay-length regions to overlap, constraining the $p_z^*$ orbital components as little as possible on the minority sublattice atoms in the overlap regions results in the vacancy-induced $p_z^*$ states being coherent. The coherent process in the overlap region leads to the wavefunctions in all the involved regions antisymmetrized, consequently causing ferromagnetism according to the electron exchange antisymmetric principle. This unusual mechanism concerned with the origin of $sp$-electron magnetism and magnetic ordering has never before been reported and is distinctly different from conventional mechanisms.
We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states 5s, 5p, and 5d are strongly hybridized with the O 2p-states, and that our DFT-calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity.
The linewidths of the electronic bands originating from the electron-phonon coupling in graphene are analyzed based on model tight-binding calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. Our calculations confirm the prediction that the high-energy optical phonons provide the most essential contribution to the phonon-induced linewidth of the two upper occupied $sigma$ bands near the $bar{Gamma}$-point. For larger binding energies of these bands, as well as for the $pi$ band, we find evidence for a substantial lifetime broadening from interband scattering $pi rightarrow sigma$ and $sigma rightarrow pi$, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated $sigma$ band linewidths are in agreement with recent published ARPES data [F. Mazzola et al., Phys.~Rev.~B. 95, 075430 (2017)] and of the $pi$ band linewidth with ARPES data presented here.
Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications.
We have previously reported ferromagnetism evinced by a large hysteretic anomalous Hall effect in twisted bilayer graphene (tBLG). Subsequent measurements of a quantized Hall resistance and small longitudinal resistance confirmed that this magnetic state is a Chern insulator. Here we report that, when tilting the sample in an external magnetic field, the ferromagnetism is highly anisotropic. Because spin-orbit coupling is negligible in graphene such anisotropy is unlikely to come from spin, but rather favors theories in which the ferromagnetism is orbital. We know of no other case in which ferromagnetism has a purely orbital origin. For an applied in-plane field larger than $5 mathrm{T}$, the out-of-plane magnetization is destroyed, suggesting a transition to a new phase.
We report the formation of a novel ferromagnetic state in the antiferromagnet BiFeO3 at the interface with La0.7Sr0.3MnO3. Using x-ray magnetic circular dichroism at Mn and Fe L2,3-edges, we discovered that the development of this ferromagnetic spin structure is strongly associated with the onset of a significant exchange bias. Our results demonstrate that the magnetic state is directly related with an electronic orbital reconstruction at the interface, which is supported by the linearly polarized x-ray absorption measurement at oxygen K-edge.