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Register a new userEvidence of orbital ferromagnetism in twisted bilayer graphene aligned to hexagonal boron nitride
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We have previously reported ferromagnetism evinced by a large hysteretic anomalous Hall effect in twisted bilayer graphene (tBLG). Subsequent measurements of a quantized Hall resistance and small longitudinal resistance confirmed that this magnetic state is a Chern insulator. Here we report that, when tilting the sample in an external magnetic field, the ferromagnetism is highly anisotropic. Because spin-orbit coupling is negligible in graphene such anisotropy is unlikely to come from spin, but rather favors theories in which the ferromagnetism is orbital. We know of no other case in which ferromagnetism has a purely orbital origin. For an applied in-plane field larger than $5 mathrm{T}$, the out-of-plane magnetization is destroyed, suggesting a transition to a new phase.
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Moire superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere with each other. In this work, we directly image the moire patterns in both monolayer graphene aligned on hBN and twisted bilayer graphene aligned on hBN, using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moire system.
We study the stability and electronic structure of magic-angle twisted bilayer graphene on the hexagonal boron nitride (TBG/BN). Full relaxation has been performed for commensurate supercells of the heterostructures with different twist angles ($theta$) and stackings between TBG and BN. We find that the slightly misaligned configuration with $theta = 0.54^circ$ and the AA/AA stacking has the globally lowest total energy due to the constructive interference of the moir{e} interlayer potentials and thus the greatly enhanced relaxation in its $1 times 1$ commensurate supercell. Gaps are opened at the Fermi level ($E_F$) for small supercells with the stackings that enable strong breaking of the $C_2$ symmetry in the atomic structure of TBG. For large supercells with $theta$ close to those of the $1 times 1$ supercells, the broadened flat bands can still be resolved from the spectral functions. The $theta = 0.54^circ$ is also identified as a critical angle for the evolution of the electronic structure with $theta$, at which the energy range of the mini-bands around $E_F$ begins to become narrower with increasing $theta$ and their gaps from the dispersive bands become wider. The discovered stablest TBG/BN with a finite $theta$ of about $0.54^circ$ and its gapped flat bands agree with recent experimental observations.
The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties in bilayer graphene (BLG) encapsulated between two hexagonal boron nitride (hBN) crystals, where the top and bottom hBN are rotationally aligned with bilayer graphene with a twist angle $theta_tsim 0^{circ} text{and}~ theta_b < 1^{circ}$, respectively. This results in the formation of two moire superlattices, with the appearance of satellite resistivity peaks at carrier densities $n_{s1}$ and $n_{s2}$, in both hole and electron doped regions, together with the resistivity peak at zero carrier density. Furthermore, we measure the temperature(T) dependence of the resistivity ($rho$). The resistivity shows a linear increment with temperature within the range 10K to 50K for the density regime $n_{s1} <n<n_{s2}$ with a large slope d$rho$/dT $sim$ 8.5~$Omega$/K. The large slope of d$rho$/dT is attributed to the enhanced electron-phonon coupling arising due to the suppression of Fermi velocity in the reconstructed minibands, which was theoretically predicted, recently in doubly aligned graphene with top and bottom hBN. Our result establishes the uniqueness of doubly aligned moire system to tune the strength of electron-phonon coupling and to modify the electronic properties of multilayered heterostructures.
The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $theta_{hBN} lesssim 2^circ$, the graphene electronic structure is strongly disturbed. The width of the low energy peak in the density of states changes from $W sim 5 - 10$ meV for a decoupled system to $sim 20 - 30$ meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moire unit cell.
Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on average, and obtain the evolution of the bands as a function of the interlayer sliding vectors and electric fields. Finite valley Chern numbers $pm 1$ are found in a wide range of parameter space when the moire bands are isolated through gaps, while the local density of states associated to the flat bands are weakly affected by the BN substrate invariably concentrating around the AA-stacked regions of tBG. We illustrate the impact of the BN substrate for a particularly pronounced electron-hole asymmetric band structure by calculating the optical conductivities of twisted bilayer graphene near the magic angle as a function of carrier density. The band structures corresponding to other $N$-multiple commensurate moire period ratios indicate it is possible to achieve narrow width $W lesssim 30$ meV isolated folded band bundles for tBG angles $theta lesssim 1^{circ}$.
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