Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAnomalous attenuation of piezoacoustic surface waves by liquid helium thin films
140
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report on the observation of an anomalously high attenuation of high frequency surface acoustic waves by thin films of liquid $^{4}$He. The piezoelectric acoustic waves propagate along the surface of a lithium niobate substrate, which is coated with varying amounts of liquid helium. When the thickness of the helium layer is much larger than the wavelength of the surface acoustic wave on the substrate its attenuation is dominated by the excitation of compressional waves into the liquid, in good agreement with theory and previous measurements. However, for sufficiently thin helium coverage, we find that the acoustic wave attenuation is significantly increased beyond that measured with the substrate submerged in bulk liquid. Possible mechanisms for this enhanced attenuation are discussed.
rate research
Read More
Electrical generation of THz spin waves is theoretically explored in an antiferromangetic nanostrip via the current-induced spin-orbit torque. The analysis based on micromagnetic simulations clearly illustrates that the Neel-vector oscillations excited at one end of the magnetic strip can propagate in the form of a traveling wave when the nanostrip axis aligns with the magnetic easy-axis. A sizable threshold is observed in the driving current density or the torque to overcome the unfavorable anisotropy as expected. The generated spin waves are found to travel over a long distance while the angle of rotation undergoes continuous decay in the presence of non-zero damping. The oscillation frequency is tunable via the strength of the spin-orbit torque, reaching the THz regime. Other key characteristics of the spin waves such as the phase and the chirality can also be modulated actively. The simulation results further indicate the possibility of wave-like superposition between the excited spin oscillations, illustrating its application as an efficient source of spin-wave signals for information processing.
The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$mu$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.
We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically-controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.
A wide variation in the disorder strength, as inferred from an order of magnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesler alloy thin films of fixed (50 nm) thickness, has been achieved by growing these films on Si(111) substrates at substrate temperatures ranging from room temperature (RT) to 600 C. An in-depth study of the influence of disorder on anomalous Hall resistivity,longitudinal resistivity(LR) and magnetoresistance, enabled by this approach, reveals the following. The side-jump mechanism gives a dominant contribution to anomalous Hall resistivity (AHR) in the CFS thin films, regardless of the degree of disorder present. A new and novel contribution to both LR and AHR characterized by the logarithmic temperature dependence at temperatures below the minimum, exclusive to the amorphous CFS films, originates from the scattering of conduction electrons from the diffusive hydrodynamic modes associated with the longitudinal component of magnetization, called diffusons. In these amorphous CFS films, the electron-diffuson, e d, scattering and weak localization (WL) mechanisms compete with that arising from the inelastic electron magnon, e m, scattering to produce the minimum in longitudinal resistivity, whereas the minimum in AHR is caused by the competing contributions from the e d and e m scattering, as WL does not make any contribution to AHR. In sharp contrast, in crystalline films, enhanced electron electron Coulomb interaction (EEI), which is basically responsible for the resistivity minimum, makes no contribution to AHR with the result that AHR does not exhibit a minimum.
We address the problem of overheating of electrons trapped on the liquid helium surface by cyclotron resonance excitation. Previous experiments, suggest that electrons can be heated to temperatures up to 1000K more than three order of magnitude higher than the temperature of the helium bath in the sub-Kelvin range. In this work we attempt to discriminate between a redistribution of thermal origin and other out-of equilibrium mechanisms that would not require so high temperatures like resonant photo-galvanic effects, or negative mobilities. We argue that for a heating scenario the direction of the electron flow under cyclotron resonance can be controlled by the shape of the initial electron density profile, with a dependence that can be modeled accurately within the Poisson-Boltzmann theory framework. This provides an self consistency-check to probe if the redistribution is indeed consistent with a thermal origin. We find that while our experimental results are consistent with the Poisson-Boltzmann theoretical dependence but some deviations suggest that other physical mechanisms can also provide a measurable contribution. Analyzing our results with the heating model we find that the electron temperatures increases with electron density under the same microwave irradiation conditions. This unexpected density dependence calls for a microscopic treatment of the energy relaxation of overheated electrons.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
