Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userLarge anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa
85
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$mu$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.
rate research
Read More
We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($sim$ 10$^7$ cm$^2$ V$^{-1}$ s$^{-1}$). In applied magnetic field, an anomalous Nernst effect is predicted to arise from the Berry curvature associated with the Weyl nodes. We report observation of a large anomalous Nernst effect in Cd$_3$As$_2$. Both the anomalous Nernst signal and transport relaxation time $tau_{tr}$ begin to increase rapidly at $sim$ 50 K. This suggests a close relation between the protection mechanism and the anomalous Nernst effect. In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
The spin Nernst effect describes a transverse spin current induced by the longitudinal thermal gradient in a system with the spin-orbit coupling. Here we study the spin Nernst effect in a mesoscopic four-terminal cross-bar Weyl semimetal device under a perpendicular magnetic field. By using the tight-binding Hamiltonian combining with the nonequilibrium Greens function method, the three elements of the spin current in the transverse leads and then spin Nernst coefficients are obtained. The results show that the spin Nernst effect in the Weyl semimetal has the essential difference with the traditional one: The z direction spin currents is zero without the magnetic field while it appears under the magnetic field, and the x and y direction spin currents in the two transverse leads flows out or flows in together, in contrary to the traditional spin Nernst effect, in which the spin current is induced by the spin-orbit coupling and flows out from one lead and flows in on the other. So we call it the anomalous spin Nernst effect. In addition, we show that the Weyl semimetals have the center-reversal-type symmetry, the mirror-reversal-type symmetry and the electron-hole-type symmetry, which lead to the spin Nernst coefficients being odd function or even function of the Fermi energy, the magnetic field and the transverse terminals. Moreover, the spin Nernst effect in the Weyl semimetals are strongly anisotropic and its coefficients are strongly dependent on both the direction of thermal gradient and the direction of the transverse lead connection. Three non-equivalent connection modes (x-z, z-x and x-y modes) are studied in detail, and the spin Nernst coefficients for three different modes exhibit very different behaviors. These strongly anisotropic behaviors of the spin Nernst effect can be used as the characterization of magnetic Weyl semimetals.
We consider the effective coupling between impurity spins on surfaces of a thin-film Weyl semimetal within Ruderman-Kittel-Kasuya-Yoshida (RKKY) theory. If the spins are on the same surface, their coupling reflects the anisotropy and the spin-momentum locking of the Fermi arcs. By contrast when the spins are on opposite surfaces, their coupling is mediated by the Fermi arcs as well as by bulk states. In this case the coupling is both surprisingly strong and strongly thickness dependent, with a maximum at an optimum thickness. We demonstrate our results using analytical solutions of states in the thin-film geometry, as well using a two-surface recursive Greens function analysis of the tight-binding model.
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, thickness dependence of spin Hall efficiency, and shift of anomalous Hall loops under applied currents were also investigated. This study not only contributes to the understanding of the mechanisms of spin-current generation from magnetic-WSM-based heterostructures, but also paves a way for the applications of magnetic WSMs in spintronic devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
