No Arabic abstract
We address the problem of overheating of electrons trapped on the liquid helium surface by cyclotron resonance excitation. Previous experiments, suggest that electrons can be heated to temperatures up to 1000K more than three order of magnitude higher than the temperature of the helium bath in the sub-Kelvin range. In this work we attempt to discriminate between a redistribution of thermal origin and other out-of equilibrium mechanisms that would not require so high temperatures like resonant photo-galvanic effects, or negative mobilities. We argue that for a heating scenario the direction of the electron flow under cyclotron resonance can be controlled by the shape of the initial electron density profile, with a dependence that can be modeled accurately within the Poisson-Boltzmann theory framework. This provides an self consistency-check to probe if the redistribution is indeed consistent with a thermal origin. We find that while our experimental results are consistent with the Poisson-Boltzmann theoretical dependence but some deviations suggest that other physical mechanisms can also provide a measurable contribution. Analyzing our results with the heating model we find that the electron temperatures increases with electron density under the same microwave irradiation conditions. This unexpected density dependence calls for a microscopic treatment of the energy relaxation of overheated electrons.
The phonon thermal contribution to the melting temperature of nano-particles is inspected. Unlike in periodic boundary condition, under a general boundary condition the integration volume of low energy phonon for a nano-particle is more complex. We estimate the size-dependent melting temperature through the phase shift of the low energy phonon mode acquired by its scattering on boundary surface. A nano-particle can have either a rising or a decreasing melting temperature due to the boundary condition effect, and we found that an upper melting temperature bound exists for a nano-particle in various environments. Moreover, the melting temperature under a fixed boundary condition sets this upper bound.
We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface roughness below 1 nm and minimal variations in work function across the surface due to the absence of polycrystalline grains. We are able to set the electron density in the channels using a ground plane. We estimate a mobility of 300 cm$^2$/V$cdot$s and electron densities as high as 2.56$times$10$^9$ cm$^{-2}$. We demonstrate control of the transport using a barrier which enables pinchoff at a central microchannel connecting two reservoirs. The conductance through the central microchannel is measured to be 10 nS for an electron density of 1.58$times$10$^9$ cm$^{-2}$. Our work extends transport measurements of surface electrons to thin helium films in microchannel devices above metallic substrates.
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the quantized states in iron $3d$-band QWs, as observed in experiments and theoretical calculations. We find that the magnetization rotation in the Fe QWs significantly shifts the QW quantization levels, which modulate the resonant-tunneling current in MTJs, resulting in a tunneling anisotropic magnetoresistance (TAMR) effect of QWs. This QW-TAMR effect is sizable compared to other types of TAMR effect, and it is present above the room-temperature. In a QW MTJ of Cr/Fe/MgAl$_2$O$_4$/top electrode, where the QW is formed by a mismatch between Cr and Fe in the $d$ band with $Delta_1$ symmetry, a QW-TAMR ratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at 380K. The magnetic control of QW transport can open new applications for spin-coupled optoelectronic devices, ultra-thin sensors, and memories.
An ultra-strong photovoltaic effect has recently been reported for electrons trapped on a liquid Helium surface under a microwave excitation tuned at intersubband resonance [D. Konstantinov et. al. : J. Phys. Soc. Jpn. 81, 093601 (2012) ]. In this article, we analyze theoretically the redistribution of the electron density induced by an overheating of the surface electrons under irradiation, and obtain quantitative predictions for the photocurrent dependence on the effective electron temperature and confinement voltages. We show that the photo-current can change sign as a function of the parameters of the electrostatic confinement potential on the surface, while the photocurrent measurements reported so far have been performed only at a fixed confinement potential. The experimental observation of this sign reversal could provide a reliable estimation of the electron effective temperature in this new out of equilibrium state. Finally, we have also considered the effect of the temperature on the outcome of capacitive transport measurement techniques. These investigations led us to develop, numerical and analytical methods for solving the Poisson-Boltzmann equation in the limit of very low temperatures which could be useful for other systems.
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.